SiCN作为杂化键合材料的独特性能

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598192

S. Iacovo, Soon-Wook Kim, F. Nagano, Lan Peng, F. Inoue, A. Phommahaxay, E. Beyne

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引用次数: 3

摘要

采用250°C的热预算成功地实现了Cu-SiCN直接杂化键合。优异的结果应归功于对不同加工步骤的严格控制，但也归功于用作键合材料的SiCN介电材料的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The unique properties of SiCN as bonding material for hybrid bonding

Direct Cu-SiCN hybrid bonding is successfully realized by using a thermal budget of 250 °C. The excellent results should be attributed to the tight control on the different processing steps but also to the properties of the SiCN dielectric used as bonding material.

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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