用于量子位读出的2.57mW 5.9-8.4GHz低温FinFET LNA

2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2022-06-19 DOI:10.1109/RFIC54546.2022.9863158

J. Plouchart, Dereje Yilma, John Timmerwilke, S. Chakraborty, K. Tien, A. Valdes-Garcia, D. Friedman

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引用次数: 3

摘要

采用14nm FinFET CMOS技术实现了用于低温的5.9-8.4GHz LNA。4.1 K时，在7.1GHz测量到13.4dB的峰值LNA增益，3dB带宽为2.5GHz，功耗为2.1mW。在4.1K时，6 ~ 8GHz的实测噪声系数为0.53 ~ 0.57 db，实测噪声温度为37.6 ~ 41k;这组测量的功耗为2.57mW。

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A 2.57mW 5.9-8.4GHz Cryogenic FinFET LNA for Qubit Readout

A 5.9-8.4GHz LNA intended for use at cryogenic temperatures was implemented in a 14nm FinFET CMOS technology. At 4.1 K, peak LNA gain of 13.4dB is measured at 7.1GHz, with a 3dB bandwidth of 2.5GHz and power consumption of 2.1mW. Also, at 4.1K, measured noise figure from 6 to 8GHz is 0.53-0.57dB and the measured noise temperature is 37.6-41K; power consumption in this set of measurements was 2.57mW.

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2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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