6.7 A 112Gb/s PAM-4电压型变送器，带有4抽头两步FFE和40nm CMOS自动相位对准技术

2019 IEEE International Solid- State Circuits Conference - (ISSCC) Pub Date : 2019-02-01 DOI:10.1109/ISSCC.2019.8662361

Pen-Jui Peng, Yan-Ting Chen, Sheng-Tsung Lai, Chao-Hsuan Chen, Hsiang-En Huang, T. Shih

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引用次数: 13

摘要

有线通信的不断发展促使发射机以更高的速度运行。400GbE的应用也推动发射机设计为112Gb/s单通道[1-2]。然而，使用先进的工艺$(\lt16$ nm)很难降低成本。本文采用所提出的两步FFE和自动相位对准技术，在40nm CMOS上制作了112Gb/s的PAM-4电压模发射机，提高了输出带宽和功耗。它在28GHz下以3.89pJ/b的效率在5.5dB损耗下提供高质量的眼图。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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6.7 A 112Gb/s PAM-4 Voltage-Mode Transmitter with 4-Tap Two-Step FFE and Automatic Phase Alignment Techniques in 40nm CMOS

The continuous development of wireline communication encourages transmitters to operate at higher speeds. The applications of 400GbE also push the transmitter to be designed at 112Gb/s for a single lane [1–2]. However, the use of advanced processes $(\lt16$ nm) hardly reduces the costs. This paper presents a 112Gb/s PAM-4 voltage-mode transmitter fabricated in 40nm CMOS by using the proposed two-step FFE and the automatic phase alignment techniques, improving the output bandwidth as well as the power dissipation. It delivers high-quality eye diagrams under 5.5dB loss at 28GHz with 3.89pJ/b efficiency.

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2019 IEEE International Solid- State Circuits Conference - (ISSCC)

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