{"title":"40ghz带宽功率微波负载","authors":"A. N. Rebrov, A. Grigoriev","doi":"10.1109/APEDE48864.2020.9255412","DOIUrl":null,"url":null,"abstract":"The work describes a power microwave load with a bandwidth of 40 GHz. The load has silicon carbide (SiC) base and dissipated power of 50 W. The load has minor dimensions and simple, easy to produce construction. The temperature distribution on the surface of the resistive film is given.","PeriodicalId":277559,"journal":{"name":"2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Power Microwave Load with 40 GHz Bandwidth\",\"authors\":\"A. N. Rebrov, A. Grigoriev\",\"doi\":\"10.1109/APEDE48864.2020.9255412\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The work describes a power microwave load with a bandwidth of 40 GHz. The load has silicon carbide (SiC) base and dissipated power of 50 W. The load has minor dimensions and simple, easy to produce construction. The temperature distribution on the surface of the resistive film is given.\",\"PeriodicalId\":277559,\"journal\":{\"name\":\"2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEDE48864.2020.9255412\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEDE48864.2020.9255412","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The work describes a power microwave load with a bandwidth of 40 GHz. The load has silicon carbide (SiC) base and dissipated power of 50 W. The load has minor dimensions and simple, easy to produce construction. The temperature distribution on the surface of the resistive film is given.
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