{"title":"重掺杂源对纳米线隧道晶体管亚阈值特性的影响","authors":"M. Khayer, R. Lake","doi":"10.1109/DRC.2011.5994415","DOIUrl":null,"url":null,"abstract":"Band-to-band tunneling field-effect transistors (TFETs) have recently gained interest due to their operation in the sub-60 mV/decade limit which makes them ideal for reducing power dissipation in integrated circuit. III–V nanowire (NW) such as InSb NW TFETs show promise for ultra-low power and high-speed devices [1] due to its narrow direct bandgap.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Effects of heavily doped source on the subthreshold characteristics of nanowire tunneling transistors\",\"authors\":\"M. Khayer, R. Lake\",\"doi\":\"10.1109/DRC.2011.5994415\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Band-to-band tunneling field-effect transistors (TFETs) have recently gained interest due to their operation in the sub-60 mV/decade limit which makes them ideal for reducing power dissipation in integrated circuit. III–V nanowire (NW) such as InSb NW TFETs show promise for ultra-low power and high-speed devices [1] due to its narrow direct bandgap.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994415\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994415","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of heavily doped source on the subthreshold characteristics of nanowire tunneling transistors
Band-to-band tunneling field-effect transistors (TFETs) have recently gained interest due to their operation in the sub-60 mV/decade limit which makes them ideal for reducing power dissipation in integrated circuit. III–V nanowire (NW) such as InSb NW TFETs show promise for ultra-low power and high-speed devices [1] due to its narrow direct bandgap.