一个46ns 256K CMOS SRAM

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1984.1156711

M. Isobe, J. Matsunaga, T. Sakurai, T. Ohtani, K. Sawada, H. Nozawa, T. Iizuka, S. Kohyama

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引用次数: 8

摘要

本文报道了一种采用双金属、双聚1.2μm p阱技术制备的46ns 32K×8 CMOS RAM。RAM(59.2mm2)在1MHz时工作功率为10mW，待机功率为30μW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 46ns 256K CMOS SRAM

A 46ns 32K×8 CMOS RAM fabricated with double metal, double poly 1.2μm P-well technology will be reported. The RAM(59.2mm²) has a 10mW operating power at 1MHz and a 30μW standby power.

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1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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