孔径为100 /spl μ m，无铝，0.98 /spl μ m的大光腔二极管激光器，功率为8 W

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553723

L. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Garbuzov, L. DeMarco, J. Connolly, M. Jansen, F. Fang, R. Nabiev

{"title":"孔径为100 /spl μ m，无铝，0.98 /spl μ m的大光腔二极管激光器，功率为8 W","authors":"L. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Garbuzov, L. DeMarco, J. Connolly, M. Jansen, F. Fang, R. Nabiev","doi":"10.1109/ISLC.1996.553723","DOIUrl":null,"url":null,"abstract":"By increasing the optical-cavity thickness of SCH-SL-DQW InGaAs/InGaP/GaAs (/spl lambda/=0.98 /spl mu/m) lasers from 0.2 /spl mu/m to 1.0 /spl mu/m the internal loss decreases fivefold to /spl sim/1.5 cm/sup -1/, and the transverse spot size doubles to 0.6 /spl mu/m (FWHM). As a result, 100 /spl mu/m-aperture devices emit up to 8.1 W CW from their front facets.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"8 W CW front-facet power from 100 /spl mu/m-aperture, Al-free, 0.98 /spl mu/m diode lasers with large optical cavity\",\"authors\":\"L. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Garbuzov, L. DeMarco, J. Connolly, M. Jansen, F. Fang, R. Nabiev\",\"doi\":\"10.1109/ISLC.1996.553723\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By increasing the optical-cavity thickness of SCH-SL-DQW InGaAs/InGaP/GaAs (/spl lambda/=0.98 /spl mu/m) lasers from 0.2 /spl mu/m to 1.0 /spl mu/m the internal loss decreases fivefold to /spl sim/1.5 cm/sup -1/, and the transverse spot size doubles to 0.6 /spl mu/m (FWHM). As a result, 100 /spl mu/m-aperture devices emit up to 8.1 W CW from their front facets.\",\"PeriodicalId\":346992,\"journal\":{\"name\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1996.553723\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.553723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

将sh - sl - dqw InGaAs/InGaP/GaAs (/spl lambda/=0.98 /spl mu/m)激光器的光腔厚度从0.2 /spl mu/m增加到1.0 /spl mu/m，内部损耗降低5倍至/spl sim/1.5 cm/sup -1/，横向光斑尺寸增加一倍至0.6 /spl mu/m (FWHM)。因此，100 /spl mu/m孔径的器件从其正面发射高达8.1 W的连续波。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

8 W CW front-facet power from 100 /spl mu/m-aperture, Al-free, 0.98 /spl mu/m diode lasers with large optical cavity

By increasing the optical-cavity thickness of SCH-SL-DQW InGaAs/InGaP/GaAs (/spl lambda/=0.98 /spl mu/m) lasers from 0.2 /spl mu/m to 1.0 /spl mu/m the internal loss decreases fivefold to /spl sim/1.5 cm/sup -1/, and the transverse spot size doubles to 0.6 /spl mu/m (FWHM). As a result, 100 /spl mu/m-aperture devices emit up to 8.1 W CW from their front facets.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Digest. 15th IEEE International Semiconductor Laser Conference

自引率

0.00%

发文量