{"title":"一种k波段离子注入的砷化镓场效应晶体管","authors":"Chiung-Tung Li, Philip T. Chen, Patrick H. Wang","doi":"10.1109/EUMA.1978.332579","DOIUrl":null,"url":null,"abstract":"An ion-implanted, 0.5 micron gate GaAs MESFET designed for K-band (18-26 GHz) applications is described in this paper. Silicon implantation was used to form both the channel and the N+ contact layers. The device has 9.8 dB gain at 18 GHz and its extrapolated fmax is about 80 GHz. At 25 GHz, it achieved 12.1 dBm output power as a tunable oscillator, and 11 dBmoutput power with 16 dB gain as a narrow band reflection type of amplifier.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A K-Band ION Implanted GaAs FET\",\"authors\":\"Chiung-Tung Li, Philip T. Chen, Patrick H. Wang\",\"doi\":\"10.1109/EUMA.1978.332579\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An ion-implanted, 0.5 micron gate GaAs MESFET designed for K-band (18-26 GHz) applications is described in this paper. Silicon implantation was used to form both the channel and the N+ contact layers. The device has 9.8 dB gain at 18 GHz and its extrapolated fmax is about 80 GHz. At 25 GHz, it achieved 12.1 dBm output power as a tunable oscillator, and 11 dBmoutput power with 16 dB gain as a narrow band reflection type of amplifier.\",\"PeriodicalId\":429268,\"journal\":{\"name\":\"1978 8th European Microwave Conference\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 8th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1978.332579\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 8th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1978.332579","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An ion-implanted, 0.5 micron gate GaAs MESFET designed for K-band (18-26 GHz) applications is described in this paper. Silicon implantation was used to form both the channel and the N+ contact layers. The device has 9.8 dB gain at 18 GHz and its extrapolated fmax is about 80 GHz. At 25 GHz, it achieved 12.1 dBm output power as a tunable oscillator, and 11 dBmoutput power with 16 dB gain as a narrow band reflection type of amplifier.
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