用于通信和雷达应用的超宽带倍频mmic

Christopher M. Grӧtsch, S. Wagner, A. Leuther, D. Meier, I. Kallfass
{"title":"用于通信和雷达应用的超宽带倍频mmic","authors":"Christopher M. Grӧtsch, S. Wagner, A. Leuther, D. Meier, I. Kallfass","doi":"10.23919/EUMIC.2018.8539865","DOIUrl":null,"url":null,"abstract":"Two H-band frequency multiplier MMICs, a frequency doubler and tripler, are presented. Both circuits were characterized over a frequency range of 235 − 285 GHz. The 3-dB bandwidth of both chips exceeds the measurement range of 50 GHz. Without any post-amplification the multiplier-by-3 achieves an average output power of −6 dBm at an input power of 6 dBm. The multiplier-by-two generates −3.6 dBm average at an input power of 5 dBm. Both MMICs were realized in a 35 nm gate-length InGaAs-based metamorphic HEMT technology. A comparison of simulation and measurement was conducted and shows a very good correspondence.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Ultra-Broadband Frequency Multiplier MMICs for Communication and Radar Applications\",\"authors\":\"Christopher M. Grӧtsch, S. Wagner, A. Leuther, D. Meier, I. Kallfass\",\"doi\":\"10.23919/EUMIC.2018.8539865\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two H-band frequency multiplier MMICs, a frequency doubler and tripler, are presented. Both circuits were characterized over a frequency range of 235 − 285 GHz. The 3-dB bandwidth of both chips exceeds the measurement range of 50 GHz. Without any post-amplification the multiplier-by-3 achieves an average output power of −6 dBm at an input power of 6 dBm. The multiplier-by-two generates −3.6 dBm average at an input power of 5 dBm. Both MMICs were realized in a 35 nm gate-length InGaAs-based metamorphic HEMT technology. A comparison of simulation and measurement was conducted and shows a very good correspondence.\",\"PeriodicalId\":248339,\"journal\":{\"name\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMIC.2018.8539865\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539865","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

提出了两种h波段倍频mmic,即倍频器和三倍频器。两种电路的特征都在235 - 285 GHz的频率范围内。两种芯片的3db带宽都超过了50ghz的测量范围。在没有任何后放大的情况下,乘法器在输入功率为6dbm时的平均输出功率为- 6dbm。2乘法器在输入功率为5dbm时平均产生−3.6 dBm。这两种mmic都是在35nm栅长ingaas基变质HEMT技术中实现的。仿真与实测结果进行了比较,结果表明两者吻合良好。
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Ultra-Broadband Frequency Multiplier MMICs for Communication and Radar Applications
Two H-band frequency multiplier MMICs, a frequency doubler and tripler, are presented. Both circuits were characterized over a frequency range of 235 − 285 GHz. The 3-dB bandwidth of both chips exceeds the measurement range of 50 GHz. Without any post-amplification the multiplier-by-3 achieves an average output power of −6 dBm at an input power of 6 dBm. The multiplier-by-two generates −3.6 dBm average at an input power of 5 dBm. Both MMICs were realized in a 35 nm gate-length InGaAs-based metamorphic HEMT technology. A comparison of simulation and measurement was conducted and shows a very good correspondence.
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