U. Singisetti, M. Wong, S. Dasgupta, Nidhi, B. Swenson, B. Thibeault, J. Speck, U. Mishra
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引用次数: 3
摘要
在n极氮化镓上制备的e型氮化镓场效应管具有几个独特的缩放优势,例如具有后势垒的沟道垂直缩放以获得更好的电子约束和n+源/漏区再生以降低通路电阻。它们还可以与最近展示的高性能n极d模式[1]器件集成,从而实现新颖的电路功能。已证明具有良好性能的ga极e模器件[2];然而,在这些器件中,源极/漏极触点总是被制作成宽带间隙AlxGa1−xN障碍,导致更高的接触电阻,这大大限制了器件的积极缩放。在这里,我们报告了用可扩展的栅极优先工艺制造的e型n极氮化镓场效应管,具有自对准再生源/漏极区域和非合金欧姆触点,具有低接入电阻。这些器件在Lg = 0.55µm时的峰值驱动电流(Id)为0.74 a /mm,峰值跨导(gm)为250 mS/mm,阈值电压(Vth)为0.8 V。
Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth
E-mode GaN FETs fabricated on N-polar GaN have several unique scaling advantages such as vertical scaling of channel with back barrier for better electron confinement and regrowth of the n+ source/drain regions for reduced access resistance. They can also be integrated with recently demonstrated high performance N-polar D-mode [1] devices enabling novel circuit functionalities. Ga-polar E-mode devices with good performance have been demonstrated [2]; however in these devices source/drain contacts are invariably made to wideband gap AlxGa1−xN barriers leading to higher contact resistances which considerably limit the aggressive scaling of the device. Here we report E-mode N-polar GaN FETs fabricated with a scalable gate first process with self-aligned regrown source/drain regions and non-alloyed ohmic contacts for low access resistances. These devices show a peak drive current (Id) of 0.74 A/mm and peak transconductance (gm) of 250 mS/mm at Lg = 0.55 µm with a threshold voltage (Vth) of 0.8 V.