光斑尺寸转换器集成半导体光放大器

J. Lee, J.R. Kim, S. Park, M.W. Park, J.S. Yoo, S.D. Lee, A. Choo, T. Kim
{"title":"光斑尺寸转换器集成半导体光放大器","authors":"J. Lee, J.R. Kim, S. Park, M.W. Park, J.S. Yoo, S.D. Lee, A. Choo, T. Kim","doi":"10.1109/CLEOPR.1999.814710","DOIUrl":null,"url":null,"abstract":"Spot size converter (SSC)-SOA consists of a slightly tensile bulk 0.2 /spl mu/m thick InGaAsP (/spl lambda/=1.55 /spl mu/m) active layer and 0.1 /spl mu/m thick InGaAsP (/spl lambda/=1.3 /spl mu/m) waveguides, which were grown by selective area growth (SAG) using MOCVD to implement SSC. The total device length is 1500 /spl mu/m. The thickness enhancement factor was greater than 3 by using SiO/sub 2/ mask. The SAG method with lateral tapering technique provided a typical beam divergences of 8/spl deg//spl times/15/spl deg/. To reduce facet reflectivity, window regions of 20 /spl mu/m length were introduced and the waveguides were tilted by 7/spl deg/. Both facets were antireflection coated to minimize the reflection from the cleaved facet. The gain measurement was done by coupling lensed fibers to both sides. To obtain the higher coupling efficiency in SOA module, taper lensed fiber with AR coating were used. Larger than 22 dB of the fiber to fiber gain was obtained for -20 dBm input power and 150 mA at 1540 nm.","PeriodicalId":408728,"journal":{"name":"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Spot size converter integrated semiconductor optical amplifier\",\"authors\":\"J. Lee, J.R. Kim, S. Park, M.W. Park, J.S. Yoo, S.D. Lee, A. Choo, T. Kim\",\"doi\":\"10.1109/CLEOPR.1999.814710\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Spot size converter (SSC)-SOA consists of a slightly tensile bulk 0.2 /spl mu/m thick InGaAsP (/spl lambda/=1.55 /spl mu/m) active layer and 0.1 /spl mu/m thick InGaAsP (/spl lambda/=1.3 /spl mu/m) waveguides, which were grown by selective area growth (SAG) using MOCVD to implement SSC. The total device length is 1500 /spl mu/m. The thickness enhancement factor was greater than 3 by using SiO/sub 2/ mask. The SAG method with lateral tapering technique provided a typical beam divergences of 8/spl deg//spl times/15/spl deg/. To reduce facet reflectivity, window regions of 20 /spl mu/m length were introduced and the waveguides were tilted by 7/spl deg/. Both facets were antireflection coated to minimize the reflection from the cleaved facet. The gain measurement was done by coupling lensed fibers to both sides. To obtain the higher coupling efficiency in SOA module, taper lensed fiber with AR coating were used. Larger than 22 dB of the fiber to fiber gain was obtained for -20 dBm input power and 150 mA at 1540 nm.\",\"PeriodicalId\":408728,\"journal\":{\"name\":\"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CLEOPR.1999.814710\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOPR.1999.814710","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

点尺寸转换器(SSC)-SOA由0.2 /spl mu/m厚的InGaAsP (/spl lambda/=1.55 /spl mu/m)有源层和0.1 /spl mu/m厚的InGaAsP (/spl lambda/=1.3 /spl mu/m)波导组成,通过MOCVD的选择性面积生长(SAG)来实现SSC。设备总长度为1500 /spl mu/m。SiO/ sub2 /掩膜的增厚系数大于3。采用横向变细技术的SAG方法提供了典型的波束发散度为8/spl度//spl倍/15/spl度/。为了降低facet反射率,引入了20 /spl mu/m长度的窗口区域,波导倾斜7/spl度/。两个面都涂有抗反射涂层,以尽量减少来自切割面的反射。增益测量是通过在两侧耦合透镜光纤来完成的。为了在SOA模块中获得更高的耦合效率,采用了AR涂层锥形透镜光纤。当输入功率为-20 dBm, 1540 nm波长为150 mA时,光纤增益大于22 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Spot size converter integrated semiconductor optical amplifier
Spot size converter (SSC)-SOA consists of a slightly tensile bulk 0.2 /spl mu/m thick InGaAsP (/spl lambda/=1.55 /spl mu/m) active layer and 0.1 /spl mu/m thick InGaAsP (/spl lambda/=1.3 /spl mu/m) waveguides, which were grown by selective area growth (SAG) using MOCVD to implement SSC. The total device length is 1500 /spl mu/m. The thickness enhancement factor was greater than 3 by using SiO/sub 2/ mask. The SAG method with lateral tapering technique provided a typical beam divergences of 8/spl deg//spl times/15/spl deg/. To reduce facet reflectivity, window regions of 20 /spl mu/m length were introduced and the waveguides were tilted by 7/spl deg/. Both facets were antireflection coated to minimize the reflection from the cleaved facet. The gain measurement was done by coupling lensed fibers to both sides. To obtain the higher coupling efficiency in SOA module, taper lensed fiber with AR coating were used. Larger than 22 dB of the fiber to fiber gain was obtained for -20 dBm input power and 150 mA at 1540 nm.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Quantum cryptography Low threshold GaInAsP lasers with semiconductor/air DBR fabricated by inductively coupled plasma etching Hyper-Rayleigh light scattering by dislocation deformation Two color hologram storage using stoichiometric lithium niobate Excitation delocalization and relaxation in linear and circular arrays of porphyrins
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1