{"title":"溶胶-凝胶法制备ZnO薄膜作为倒置聚合物太阳能电池的电子传输层","authors":"Mei-Ying Chang, Chun-Chiao Lin, Chih-Kuo Huang","doi":"10.1109/AM-FPD.2016.7543678","DOIUrl":null,"url":null,"abstract":"In this paper, we used sol-gel derived ZnO solution of different molar ratio of ethanolamine with low temperature process deposited on ITO substrate as the electron transport layer (ETL) in inverted polymer solar cells (IPSCs). We found through a detailed analysis of less ethanolamine and low-temperature process ZnO thin film, which gives both high transparency and comparative literature has a simple process and control the film surface morphology, and low-temperature process of flexible, this increases the short-circuit density from 7.01 to 8.20mA/cm2 at an annealing temperature of 150°C for 10min. The flexible IPSCs exhibit a PCE of 2.48 to 3.17% for poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PC61BM) blend film as the active layer under simulated AM1.5G illumination of 100mW/cm2.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Sol-gel process ZnO thin film as the electron transport layer in inverted polymer solar cell\",\"authors\":\"Mei-Ying Chang, Chun-Chiao Lin, Chih-Kuo Huang\",\"doi\":\"10.1109/AM-FPD.2016.7543678\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we used sol-gel derived ZnO solution of different molar ratio of ethanolamine with low temperature process deposited on ITO substrate as the electron transport layer (ETL) in inverted polymer solar cells (IPSCs). We found through a detailed analysis of less ethanolamine and low-temperature process ZnO thin film, which gives both high transparency and comparative literature has a simple process and control the film surface morphology, and low-temperature process of flexible, this increases the short-circuit density from 7.01 to 8.20mA/cm2 at an annealing temperature of 150°C for 10min. The flexible IPSCs exhibit a PCE of 2.48 to 3.17% for poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PC61BM) blend film as the active layer under simulated AM1.5G illumination of 100mW/cm2.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2016.7543678\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sol-gel process ZnO thin film as the electron transport layer in inverted polymer solar cell
In this paper, we used sol-gel derived ZnO solution of different molar ratio of ethanolamine with low temperature process deposited on ITO substrate as the electron transport layer (ETL) in inverted polymer solar cells (IPSCs). We found through a detailed analysis of less ethanolamine and low-temperature process ZnO thin film, which gives both high transparency and comparative literature has a simple process and control the film surface morphology, and low-temperature process of flexible, this increases the short-circuit density from 7.01 to 8.20mA/cm2 at an annealing temperature of 150°C for 10min. The flexible IPSCs exhibit a PCE of 2.48 to 3.17% for poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PC61BM) blend film as the active layer under simulated AM1.5G illumination of 100mW/cm2.