高速I/O芯片封装系统的原位表征

J. Ahn, S. Puligundla, R. Bashirullah, R. Fox, W. Eisenstadt
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引用次数: 5

摘要

本文报道了高速I/O芯片封装系统的信号完整性模型验证方法,包括同步开关噪声、封装功率/地噪声和串扰。I/O芯片性能的ibis模型是从使用高阻抗探头的测量中提取的。基于IBIS宏模型的SPICE仿真和板载测量进行了比较,优化了几GHz范围内的封装模型。采用TI 65nm数字CMOS工艺设计了包含差分CMOS电流模逻辑(CML)和单端Gunning收发逻辑(GTL) I/O的表征IC。关键CMOS CML表征数据用于研究封装对信号完整性性能的影响,GTL数据即将发布。
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In-Situ Characterization of High-Speed I/O Chip-Package Systems
This paper reports methods of signal integrity model validation for high-speed I/O chip-package systems including simultaneous switching noise, package power/ground noise and crosstalk. IBIS-models of I/O chip performance are extracted from measurements using high impedance probes. IBIS macro model based SPICE simulations and onboard measurements are compared to optimize package model over a several GHz range. A characterization IC including differential CMOS current-mode logic, (CML) and single-ended, Gunning transceiver logic, (GTL) I/O were designed with TI 65 nm digital CMOS processes. Key CMOS CML characterization data is used to investigate the effects of the package on signal integrity performance and GTL data will be forthcoming.
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