分数n频率合成器带内相位降噪技术

Chun-Ping Wang, Tai-Cheng Lee
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引用次数: 1

摘要

为了降低带内相位噪声,提出了一种采用双频时钟发生器的分数n锁相环。该结构使PFD/CP能够在线性区域工作,以避免噪声折叠效应。可调整最佳工作条件以获得最佳带内相位噪声。所提出的技术应用于0.18 μm CMOS工艺制作的800 mhz分数n锁相环。实验结果表明,分数n锁相环的集成rms抖动(10 kHz至10 MHz)可以从26.45 ps大大提高到3.91 ps。这个完全集成的锁相环在1.8 v电源下耗散23.5 mA。
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A technique for in-band phase noise reduction in fractional-N frequency synthesizers
A fractional-N PLL employing a dual-frequency clock generator is proposed to achieve lowering the in-band phase noise. The architecture enables the PFD/CP to operate in the linear region to avoid noise-folding effect. An optimum operating condition can be tuned to achieve the best in-band phase noise. The proposed techniques are employed in a 800-MHz fractional-N PLL fabricated in a 0.18-μm CMOS process. The experimental results demonstrate that the integrated rms jitter (10 kHz to 10 MHz) in the fractional-N PLL can be greatly improved from 26.45 ps to 3.91 ps. This fully-integrated PLL dissipates 23.5 mA from a 1.8-V supply.
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Copyright page Fractional-N DPLL based low power clocking architecture for 1–14 Gb/s multi-standard transmitter A 16–43 GHz low-noise amplifer with 2.5–4.0 dB noise figure A 12 bit 150 MS/s 1.5 mW SAR ADC with adaptive radix DAC in 40 nm CMOS A low-power calibration-free fractional-N digital PLL with high linear phase interpolator
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