{"title":"分数n频率合成器带内相位降噪技术","authors":"Chun-Ping Wang, Tai-Cheng Lee","doi":"10.1109/ASSCC.2016.7844188","DOIUrl":null,"url":null,"abstract":"A fractional-N PLL employing a dual-frequency clock generator is proposed to achieve lowering the in-band phase noise. The architecture enables the PFD/CP to operate in the linear region to avoid noise-folding effect. An optimum operating condition can be tuned to achieve the best in-band phase noise. The proposed techniques are employed in a 800-MHz fractional-N PLL fabricated in a 0.18-μm CMOS process. The experimental results demonstrate that the integrated rms jitter (10 kHz to 10 MHz) in the fractional-N PLL can be greatly improved from 26.45 ps to 3.91 ps. This fully-integrated PLL dissipates 23.5 mA from a 1.8-V supply.","PeriodicalId":278002,"journal":{"name":"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A technique for in-band phase noise reduction in fractional-N frequency synthesizers\",\"authors\":\"Chun-Ping Wang, Tai-Cheng Lee\",\"doi\":\"10.1109/ASSCC.2016.7844188\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fractional-N PLL employing a dual-frequency clock generator is proposed to achieve lowering the in-band phase noise. The architecture enables the PFD/CP to operate in the linear region to avoid noise-folding effect. An optimum operating condition can be tuned to achieve the best in-band phase noise. The proposed techniques are employed in a 800-MHz fractional-N PLL fabricated in a 0.18-μm CMOS process. The experimental results demonstrate that the integrated rms jitter (10 kHz to 10 MHz) in the fractional-N PLL can be greatly improved from 26.45 ps to 3.91 ps. This fully-integrated PLL dissipates 23.5 mA from a 1.8-V supply.\",\"PeriodicalId\":278002,\"journal\":{\"name\":\"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2016.7844188\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2016.7844188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A technique for in-band phase noise reduction in fractional-N frequency synthesizers
A fractional-N PLL employing a dual-frequency clock generator is proposed to achieve lowering the in-band phase noise. The architecture enables the PFD/CP to operate in the linear region to avoid noise-folding effect. An optimum operating condition can be tuned to achieve the best in-band phase noise. The proposed techniques are employed in a 800-MHz fractional-N PLL fabricated in a 0.18-μm CMOS process. The experimental results demonstrate that the integrated rms jitter (10 kHz to 10 MHz) in the fractional-N PLL can be greatly improved from 26.45 ps to 3.91 ps. This fully-integrated PLL dissipates 23.5 mA from a 1.8-V supply.