基于gm增强和电容体驱动前馈技术的22nm CMOS高PSR和快速瞬态响应输出无电容LDO

Heng Liu, Dongxu Li, Xian Tang
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引用次数: 0

摘要

本文提出了一种采用电容体驱动前馈(CBDFF)技术的无输出电容低差稳压器(OCL-LDO)和一种带有gm增强的自适应偏置误差放大器,以提高电源抑制(PSR)和瞬态响应。所提出的OCL-LDO已在22nm CMOS技术中实现。它从1.05-1.25 V的电源中消耗49µa的静态电流,压降电压为200mv。在负载电流为20 mA时,OCL-LDO在低频时实现-84 dB的PSR,在1 MHz时实现-69 dB的PSR。实现了0.18 mV/V的线路调节、0.77µV/mA的负载调节和135 ns的稳定时间。
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A High PSR and Fast Transient Response Output-Capacitorless LDO using Gm-Boosting and Capacitive Bulk-Driven Feed-Forward Technique in 22nm CMOS
This paper presents an output-capacitorless low-dropout regulator (OCL-LDO) using capacitive bulk-driven feed-forward (CBDFF) technique and an adaptive-biasing error amplifier with gm-boosting to enhance the power supply rejection (PSR) and the transient response. The proposed OCL-LDO has been implemented in a 22nm CMOS technology. It consumes a quiescent current of 49 µA from a power supply of 1.05-1.25 V and has a dropout voltage of 200 mV. The OCL-LDO achieves -84 dB PSR at low frequency and -69 dB PSR at 1 MHz for the load current of 20 mA. It achieves a line regulation of 0.18 mV/V, a load regulation of 0.77 µV/mA, and a settling time of 135 ns.
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