{"title":"基于gm增强和电容体驱动前馈技术的22nm CMOS高PSR和快速瞬态响应输出无电容LDO","authors":"Heng Liu, Dongxu Li, Xian Tang","doi":"10.1109/ICTA56932.2022.9963003","DOIUrl":null,"url":null,"abstract":"This paper presents an output-capacitorless low-dropout regulator (OCL-LDO) using capacitive bulk-driven feed-forward (CBDFF) technique and an adaptive-biasing error amplifier with gm-boosting to enhance the power supply rejection (PSR) and the transient response. The proposed OCL-LDO has been implemented in a 22nm CMOS technology. It consumes a quiescent current of 49 µA from a power supply of 1.05-1.25 V and has a dropout voltage of 200 mV. The OCL-LDO achieves -84 dB PSR at low frequency and -69 dB PSR at 1 MHz for the load current of 20 mA. It achieves a line regulation of 0.18 mV/V, a load regulation of 0.77 µV/mA, and a settling time of 135 ns.","PeriodicalId":325602,"journal":{"name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A High PSR and Fast Transient Response Output-Capacitorless LDO using Gm-Boosting and Capacitive Bulk-Driven Feed-Forward Technique in 22nm CMOS\",\"authors\":\"Heng Liu, Dongxu Li, Xian Tang\",\"doi\":\"10.1109/ICTA56932.2022.9963003\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an output-capacitorless low-dropout regulator (OCL-LDO) using capacitive bulk-driven feed-forward (CBDFF) technique and an adaptive-biasing error amplifier with gm-boosting to enhance the power supply rejection (PSR) and the transient response. The proposed OCL-LDO has been implemented in a 22nm CMOS technology. It consumes a quiescent current of 49 µA from a power supply of 1.05-1.25 V and has a dropout voltage of 200 mV. The OCL-LDO achieves -84 dB PSR at low frequency and -69 dB PSR at 1 MHz for the load current of 20 mA. It achieves a line regulation of 0.18 mV/V, a load regulation of 0.77 µV/mA, and a settling time of 135 ns.\",\"PeriodicalId\":325602,\"journal\":{\"name\":\"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTA56932.2022.9963003\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTA56932.2022.9963003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A High PSR and Fast Transient Response Output-Capacitorless LDO using Gm-Boosting and Capacitive Bulk-Driven Feed-Forward Technique in 22nm CMOS
This paper presents an output-capacitorless low-dropout regulator (OCL-LDO) using capacitive bulk-driven feed-forward (CBDFF) technique and an adaptive-biasing error amplifier with gm-boosting to enhance the power supply rejection (PSR) and the transient response. The proposed OCL-LDO has been implemented in a 22nm CMOS technology. It consumes a quiescent current of 49 µA from a power supply of 1.05-1.25 V and has a dropout voltage of 200 mV. The OCL-LDO achieves -84 dB PSR at low frequency and -69 dB PSR at 1 MHz for the load current of 20 mA. It achieves a line regulation of 0.18 mV/V, a load regulation of 0.77 µV/mA, and a settling time of 135 ns.