用于超高速缓存和神经形态计算应用的自旋轨道扭矩MRAM

Siddharth Rao, K. Cai, G. Talmelli, Nathali Franchina-Vergel, Ward Janssens, H. Hody, F. Yasin, K. Wostyn, S. Couet
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引用次数: 0

摘要

自旋轨道转矩(SOT)磁随机存取存储器(MRAM)是一种3端非易失性存储器技术,具有高达多ghz的高速、高耐用性和非易失性等特点。在这里,我们展示了如何优化SOT-MRAM堆栈,以达到取代SRAM的嵌入式最后一级缓存存储器的性能。此外,我们还展示了如何优化堆栈和器件几何形状以增加密度,以及如何优化堆栈属性以使用高电阻器件执行模拟内存计算(AiMC)功能。
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Spin-orbit torque MRAM for ultrafast cache and neuromorphic computing applications
Spin-orbit torque (SOT) magnetic random-access memory (MRAM) is a 3-terminal non-volatile memory technology promising high speed up to multi-GHz, high endurance and non-volatility. Here we show how SOT-MRAM stack can be optimized to reach performance towards an embedded last level cache memory replacing SRAM. Moreover, we show how the stack and device geometry can be optimized to increase density and how the stack properties can be optimized to perform analog in-memory computing (AiMC) functions using high resistance devices.
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