K. Cavanagh, C. Liu, T. Martin, M. Hopkins, S. Sivaraya, D. Allsopp
{"title":"由MOVPE生长的绿橙色InGaN/GaN led的详细光学和电学特性","authors":"K. Cavanagh, C. Liu, T. Martin, M. Hopkins, S. Sivaraya, D. Allsopp","doi":"10.1109/ASDAM.2014.6998708","DOIUrl":null,"url":null,"abstract":"Green - orange light emitting diodes of were fabricated from InGaN/GaN wafers grown by MOVPE. Detailed measurements of the current and spectral dependence of their electroluminescence were made under low noise DC and pulsed conditions. The results revealed that low electrical to optical power conversion efficiency correlates with degrade current-voltage characteristics.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Detailed optical and electrical characterisation of green — Orange InGaN/GaN LEDs grown by MOVPE\",\"authors\":\"K. Cavanagh, C. Liu, T. Martin, M. Hopkins, S. Sivaraya, D. Allsopp\",\"doi\":\"10.1109/ASDAM.2014.6998708\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Green - orange light emitting diodes of were fabricated from InGaN/GaN wafers grown by MOVPE. Detailed measurements of the current and spectral dependence of their electroluminescence were made under low noise DC and pulsed conditions. The results revealed that low electrical to optical power conversion efficiency correlates with degrade current-voltage characteristics.\",\"PeriodicalId\":313866,\"journal\":{\"name\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2014.6998708\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998708","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Detailed optical and electrical characterisation of green — Orange InGaN/GaN LEDs grown by MOVPE
Green - orange light emitting diodes of were fabricated from InGaN/GaN wafers grown by MOVPE. Detailed measurements of the current and spectral dependence of their electroluminescence were made under low noise DC and pulsed conditions. The results revealed that low electrical to optical power conversion efficiency correlates with degrade current-voltage characteristics.
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