{"title":"带天线分割的IQ发射机阵列8位140 ghz功率dac单元","authors":"S. Shopov, S. Voinigescu","doi":"10.1109/CSICS.2014.6978539","DOIUrl":null,"url":null,"abstract":"An 8-bit power-DAC cell is demonstrated for the first time at D-band in a production 45-nm SOI CMOS technology. The circuit proves the scalability of the transmitter array architecture with antenna segmentation from the W-band to the D-band. The last two stages of the power-DAC cell employ a novel two-stage common-gate Gilbert-cell topology with series-stacking to directly modulate a 125-144 GHz carrier in phase and in amplitude. The measured gain, saturated output power, and PAE of the power- DAC cell are 14.9 dB, 13.2 dBm, and 2.8%, respectively.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"An 8-Bit 140-GHz Power-DAC Cell for IQ Transmitter Arrays with Antenna Segmentation\",\"authors\":\"S. Shopov, S. Voinigescu\",\"doi\":\"10.1109/CSICS.2014.6978539\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An 8-bit power-DAC cell is demonstrated for the first time at D-band in a production 45-nm SOI CMOS technology. The circuit proves the scalability of the transmitter array architecture with antenna segmentation from the W-band to the D-band. The last two stages of the power-DAC cell employ a novel two-stage common-gate Gilbert-cell topology with series-stacking to directly modulate a 125-144 GHz carrier in phase and in amplitude. The measured gain, saturated output power, and PAE of the power- DAC cell are 14.9 dB, 13.2 dBm, and 2.8%, respectively.\",\"PeriodicalId\":309722,\"journal\":{\"name\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2014.6978539\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2014.6978539","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An 8-Bit 140-GHz Power-DAC Cell for IQ Transmitter Arrays with Antenna Segmentation
An 8-bit power-DAC cell is demonstrated for the first time at D-band in a production 45-nm SOI CMOS technology. The circuit proves the scalability of the transmitter array architecture with antenna segmentation from the W-band to the D-band. The last two stages of the power-DAC cell employ a novel two-stage common-gate Gilbert-cell topology with series-stacking to directly modulate a 125-144 GHz carrier in phase and in amplitude. The measured gain, saturated output power, and PAE of the power- DAC cell are 14.9 dB, 13.2 dBm, and 2.8%, respectively.
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