S. Heo, Y.J. Kim, C. Kim, S. Lee, H. Lee, H. Hwang, J. Noh, B. Lee
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Graphene-ZnO:N Schottky junction based thin film transistor
Novel thin film transistor based on a graphene-ZnO Schottky junction has been demonstrated for display driver circuit applications. High transmittance over 80% in visible light wavelengths with a high on-off ratio over 104 are the merits of this device. All device fabrication processes completed at a temperature below 200°C will provide a unique advantage in the flexible display applications. The projected performance estimated by PSPICE using the experimental device parameters confirmed that this device is suitable for voltage programming pixel driver circuits.
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