{"title":"平面电感耦合等离子体中InAs刻蚀的XPS研究","authors":"F. Dultsev, V. Kesler","doi":"10.1109/EDM.2009.5173941","DOIUrl":null,"url":null,"abstract":"A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates and providing the conservation of the surface relief were revealed. The effect of the CH4/H2/Ar RF (13.56 MHz) and ICP plasma on the InAs (111)A surface composition was investigated using XPS. It was shown that plasma etching leads to arsenic depletion of the surface up to ∼18 %. Consequent chemical etching in isopropanol saturated with hydrochloric acid and vacuum annealing at 300°C restore the initial surface stoichiometry.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"XPS investigation of InAs etching in planar inductively coupled plasma\",\"authors\":\"F. Dultsev, V. Kesler\",\"doi\":\"10.1109/EDM.2009.5173941\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates and providing the conservation of the surface relief were revealed. The effect of the CH4/H2/Ar RF (13.56 MHz) and ICP plasma on the InAs (111)A surface composition was investigated using XPS. It was shown that plasma etching leads to arsenic depletion of the surface up to ∼18 %. Consequent chemical etching in isopropanol saturated with hydrochloric acid and vacuum annealing at 300°C restore the initial surface stoichiometry.\",\"PeriodicalId\":262499,\"journal\":{\"name\":\"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDM.2009.5173941\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2009.5173941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
XPS investigation of InAs etching in planar inductively coupled plasma
A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates and providing the conservation of the surface relief were revealed. The effect of the CH4/H2/Ar RF (13.56 MHz) and ICP plasma on the InAs (111)A surface composition was investigated using XPS. It was shown that plasma etching leads to arsenic depletion of the surface up to ∼18 %. Consequent chemical etching in isopropanol saturated with hydrochloric acid and vacuum annealing at 300°C restore the initial surface stoichiometry.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
