40 GHz热通倒装芯片互连

IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI:10.1109/MWSYM.2003.1212576

F. Schmuckle, A. Jentzsch, C. Gassler, P. Marschall, D. Geiger, W. Heinrich

{"title":"40 GHz热通倒装芯片互连","authors":"F. Schmuckle, A. Jentzsch, C. Gassler, P. Marschall, D. Geiger, W. Heinrich","doi":"10.1109/MWSYM.2003.1212576","DOIUrl":null,"url":null,"abstract":"A hot-via flip-chip interconnect for the 40 GHz band is presented. The chip in-out cell includes on-wafer probing pads and is minimized with regard to size. An optimized design shows excellent performance with 10 GHz of bandwidth and -40 dB isolation. This demonstrates the potential of the hot-via approach in mm-wave applications.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"40 GHz hot-via flip-chip interconnects\",\"authors\":\"F. Schmuckle, A. Jentzsch, C. Gassler, P. Marschall, D. Geiger, W. Heinrich\",\"doi\":\"10.1109/MWSYM.2003.1212576\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A hot-via flip-chip interconnect for the 40 GHz band is presented. The chip in-out cell includes on-wafer probing pads and is minimized with regard to size. An optimized design shows excellent performance with 10 GHz of bandwidth and -40 dB isolation. This demonstrates the potential of the hot-via approach in mm-wave applications.\",\"PeriodicalId\":252251,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2003.1212576\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1212576","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 17

摘要

提出了一种用于40ghz频段的热通倒装芯片互连方法。芯片输入输出单元包括晶圆上探测垫，尺寸最小。优化后的设计具有10 GHz带宽和-40 dB隔离的优异性能。这证明了热通方法在毫米波应用中的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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40 GHz hot-via flip-chip interconnects

A hot-via flip-chip interconnect for the 40 GHz band is presented. The chip in-out cell includes on-wafer probing pads and is minimized with regard to size. An optimized design shows excellent performance with 10 GHz of bandwidth and -40 dB isolation. This demonstrates the potential of the hot-via approach in mm-wave applications.

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IEEE MTT-S International Microwave Symposium Digest, 2003

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