FIB铣削对MEMS SOI悬臂梁的影响

COMMAD 2012 Pub Date : 2012-12-01 DOI:10.1109/COMMAD.2012.6472412

C. Venkatesh, P. P. Singh, M. Renilkumar, M. Varma, N. Bhat, R. Pratap, M. Martyniuk, A. Keating, G. A. Umama-Membreno, K. Silva, J. Dell, L. Faraone

{"title":"FIB铣削对MEMS SOI悬臂梁的影响","authors":"C. Venkatesh, P. P. Singh, M. Renilkumar, M. Varma, N. Bhat, R. Pratap, M. Martyniuk, A. Keating, G. A. Umama-Membreno, K. Silva, J. Dell, L. Faraone","doi":"10.1109/COMMAD.2012.6472412","DOIUrl":null,"url":null,"abstract":"Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of FIB milling on MEMS SOI cantilevers\",\"authors\":\"C. Venkatesh, P. P. Singh, M. Renilkumar, M. Varma, N. Bhat, R. Pratap, M. Martyniuk, A. Keating, G. A. Umama-Membreno, K. Silva, J. Dell, L. Faraone\",\"doi\":\"10.1109/COMMAD.2012.6472412\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.\",\"PeriodicalId\":136573,\"journal\":{\"name\":\"COMMAD 2012\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"COMMAD 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2012.6472412\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"COMMAD 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2012.6472412","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了聚焦离子束(FIB)铣削在绝缘体上硅(SOI)晶圆上制造悬臂梁时产生的应力。铣削产生的应力梯度范围从-10MPa/μm到-120MPa/μm，这取决于悬臂梁距离铣削点的位置。对铣削悬臂梁的应力进行了模拟计算。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of FIB milling on MEMS SOI cantilevers

Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.

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COMMAD 2012

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