电场和磁场对GaAs量子箱中电子的影响

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) Pub Date : 2000-06-24 DOI:10.1109/HKEDM.2000.904221

C. Chakraborty, P. Lai

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摘要

本文尝试从理论上研究电场和磁场对n-GaAs半导体量子箱的影响。由电场或磁场引起的能量位移的大小随着场强的增加而增加。对于更大的盒子尺寸，这种转变也更为明显。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effects of electric and magnetic fields on electrons in a GaAs quantum box

An attempt is made to investigate theoretically the effect of electric and magnetic fields on an n-GaAs semiconductor quantum box. The magnitude of energy shift due to the electric or magnetic field increases with the field strength. The shift is also more pronounced for larger box dimensions.

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Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)

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