N7 FinFET自对准四重模式建模

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI:10.1109/SISPAD.2018.8551646

S. Baudot, S. Guissi, A. Milenin, J. Ervin, T. Schram

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引用次数: 6

摘要

在本文中，我们利用covenor SEMulator3D虚拟平台，在工艺流程仿真的基础上建立了翅距行走模型。在模型中引入了翅片芯的锥度角，使模型与硅数据吻合较好。评估了对各种自对齐四重图案处理步骤的影响。蚀刻对图案密度的敏感性在模型中重现，并提供了对翅片高度变化的影响的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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N7 FinFET Self-Aligned Quadruple Patterning Modeling

In this paper, we model fin pitch walk based on a process flow simulation using the Coventor SEMulator3D virtual platform. A taper angle of the fin core is introduced into the model to provide good agreement with silicon data. The impact on various Self-Aligned Quadruple Patterning process steps is assessed. Etch sensitivity to pattern density is reproduced in the model and provides insight on the effect of fin height variability.

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2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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