Kenta Sahara, K. Takano, S. Hara, A. Kasamatsu, Y. Umeda
{"title":"一种基于亚太赫兹频段低节点质量因数晶体管的低群延迟变化宽带多级放大器","authors":"Kenta Sahara, K. Takano, S. Hara, A. Kasamatsu, Y. Umeda","doi":"10.1109/imarc49196.2021.9714671","DOIUrl":null,"url":null,"abstract":"We propose a simple way to increase the bandwidth and reduce the group-delay variation of a multi-stage amplifier in the sub-terahertz range. The method is to use transistors with low nodal quality factors [3] for the amplifier. To verify the proposed method, a four-stage amplifier is fabricated using a $0.13\\mu\\mathrm{m}$ SiGe BiCMOS process. The amplifier has the maximum gain of 5.42dB, the 3dB bandwidth of over 30GHz, 12.8ps.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Wideband Multi-Stage Amplifier with Low Group-Delay Variation Using Transistors with Low Nodal Quality Factors in Sub-Terahertz Band\",\"authors\":\"Kenta Sahara, K. Takano, S. Hara, A. Kasamatsu, Y. Umeda\",\"doi\":\"10.1109/imarc49196.2021.9714671\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a simple way to increase the bandwidth and reduce the group-delay variation of a multi-stage amplifier in the sub-terahertz range. The method is to use transistors with low nodal quality factors [3] for the amplifier. To verify the proposed method, a four-stage amplifier is fabricated using a $0.13\\\\mu\\\\mathrm{m}$ SiGe BiCMOS process. The amplifier has the maximum gain of 5.42dB, the 3dB bandwidth of over 30GHz, 12.8ps.\",\"PeriodicalId\":226787,\"journal\":{\"name\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/imarc49196.2021.9714671\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/imarc49196.2021.9714671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Wideband Multi-Stage Amplifier with Low Group-Delay Variation Using Transistors with Low Nodal Quality Factors in Sub-Terahertz Band
We propose a simple way to increase the bandwidth and reduce the group-delay variation of a multi-stage amplifier in the sub-terahertz range. The method is to use transistors with low nodal quality factors [3] for the amplifier. To verify the proposed method, a four-stage amplifier is fabricated using a $0.13\mu\mathrm{m}$ SiGe BiCMOS process. The amplifier has the maximum gain of 5.42dB, the 3dB bandwidth of over 30GHz, 12.8ps.