A. Nateprov, S. Radautsan, J. Schon, K. Kloc, H. Riazi-Nejad, E. Bucher
{"title":"ZnO/CdS/CuGaSe/sub 2/单晶太阳能电池","authors":"A. Nateprov, S. Radautsan, J. Schon, K. Kloc, H. Riazi-Nejad, E. Bucher","doi":"10.1109/SMICND.1996.557451","DOIUrl":null,"url":null,"abstract":"The ZnO/CdS/CuGaSe/sub 2/ single crystal solar cells with thermally evaporated CdS layers have been prepared. The cells with undoped and In-doped oxygen free buffer layers CdS had a low open-circuit voltages in comparision with chemically deposited CdS buffer layers. The strong oxygen influence on open-circuit voltage of devices was established. It is shown that using of oxygen during ZnO films preparation by rf-sputtering lead to high open circuit voltages for devices with thermal evaporated CdS buffer layers.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"ZnO/CdS/CuGaSe/sub 2/ single crystal solar cells\",\"authors\":\"A. Nateprov, S. Radautsan, J. Schon, K. Kloc, H. Riazi-Nejad, E. Bucher\",\"doi\":\"10.1109/SMICND.1996.557451\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The ZnO/CdS/CuGaSe/sub 2/ single crystal solar cells with thermally evaporated CdS layers have been prepared. The cells with undoped and In-doped oxygen free buffer layers CdS had a low open-circuit voltages in comparision with chemically deposited CdS buffer layers. The strong oxygen influence on open-circuit voltage of devices was established. It is shown that using of oxygen during ZnO films preparation by rf-sputtering lead to high open circuit voltages for devices with thermal evaporated CdS buffer layers.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557451\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The ZnO/CdS/CuGaSe/sub 2/ single crystal solar cells with thermally evaporated CdS layers have been prepared. The cells with undoped and In-doped oxygen free buffer layers CdS had a low open-circuit voltages in comparision with chemically deposited CdS buffer layers. The strong oxygen influence on open-circuit voltage of devices was established. It is shown that using of oxygen during ZnO films preparation by rf-sputtering lead to high open circuit voltages for devices with thermal evaporated CdS buffer layers.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
