场效应霍尔传感器结构和工艺参数的优化

2015 International Conference on Advanced Technologies for Communications (ATC) Pub Date : 2015-10-01 DOI:10.1109/ATC.2015.7388410

V. Volchek, I. Lovshenko, V. Stempitsky, Dao Dinh Ha, A. Belous, V. Saladukha

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摘要

给出了基于“绝缘体上硅”(SOI LSF)参数形成的MIS结构的磁敏元件场霍尔传感器的优化结果。利用Silvaco软件仿真结果确定了器件结构的主要特征。

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Optimization of structural and technological parameters of the field effect Hall sensor

The results of optimization of magnetically sensitive element Field Hall sensor based on the MIS structure formed on a "silicon-on-insulator" (SOI LSF) parameters was presented. Main characteristics of device structure were defined using the results of Silvaco software simulation.

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2015 International Conference on Advanced Technologies for Communications (ATC)

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