用于过度曝光控制的CMOS-OxRAM混合图像传感器

2016 IEEE 8th International Memory Workshop (IMW) Pub Date : 2016-05-15 DOI:10.1109/IMW.2016.7495276

A.Sai Kumar, M. Sarkar, M. Suri

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引用次数: 5

摘要

本文首次介绍了OxRAM器件在CMOS图像传感器像素上的独特应用。我们提出的混合CMOS-OxRAM像素电路利用OxRAM器件的非线性电容性和电阻性来自主控制图像过度曝光。基于HfOx的OxRAM器件在传统的4T-APS(有源像素传感器)电路中用作可编程电容负载。我们的解决方案利用基于HfOx的OxRAM器件，将单个像素的动态范围提高了~2.45(或7.8 dB)，并将180 nm节点的电容密度提高了~5。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Hybrid CMOS-OxRAM Image Sensor for Overexposure Control

This paper presents a first of its kind unique application of OxRAM devices in CMOS image sensor pixels. Our proposed hybrid CMOS-OxRAM pixel circuit exploits the non-linear capacitive and resistive properties of OxRAM device to control image overexposure autonomously. HfOx based OxRAM device is used as a programmable capacitive load in a conventional 4T-APS (active pixel sensor) circuit. Our solution exploiting HfOx based OxRAM devices, improves the dynamic range of individual pixels by a factor of ~2.45 (or 7.8 dB), and capacitance density by a factor of ~5 at 180 nm node.

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2016 IEEE 8th International Memory Workshop (IMW)

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