氟等离子体处理的双栅极氧化ALGaN/GaN MOSHEMT正常关闭操作

2013 IEEE Power and Energy Conference at Illinois (PECI) Pub Date : 2013-04-23 DOI:10.1109/PECI.2013.6506026

Liang Pang, K. Kim

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引用次数: 1

摘要

采用CF4等离子体处理和双峰栅-氧化物沉积方案实现了高性能增强模式(E-mode) AlGaN / GaN MOSHEMT。ALD-Al2O3用于阻止深度F离子注入2DEG通道，而溅射sio2用于抑制等离子体诱导的泄漏电流和增加栅极摆幅。与耗尽模式MOSHEMT相比，由此制备的e模式MOSHEMT在Vth下的位移为2.56 V，而在Imax下的位移仅为8%，这表明双峰栅-氧化物方案有望实现gan基MOSHEMT的e模式工作。

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Fluoride-plasma-treated bimodal-gate-oxide ALGaN/GaN MOSHEMT for normally-off operation

High-performance enhancement-mode (E-mode) AlGaN / GaN MOSHEMT has been achieved by CF₄ plasma treatment and bimodal-gate-oxide deposition scheme. ALD-Al₂O₃ is utilized to prevent deep F^- ion implantation into the 2DEG channel, while sputtered-SiO₂, is employed to suppress the plasma-induced leakage current and increase the gate swing. Compared with the depletion-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in V_th, but only 8% degradation in I_max, demonstrating the promise of the bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.

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2013 IEEE Power and Energy Conference at Illinois (PECI)

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