制备方法对GeSiO纳米体系结构性能的影响

CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI:10.1109/SMICND.2010.5650255

I. Stavarache, A. Lepadatu, V. Teodorescu, T. Stoica, I. Pasuk, G. Stan, V. Iancu, M. Ciurea

{"title":"制备方法对GeSiO纳米体系结构性能的影响","authors":"I. Stavarache, A. Lepadatu, V. Teodorescu, T. Stoica, I. Pasuk, G. Stan, V. Iancu, M. Ciurea","doi":"10.1109/SMICND.2010.5650255","DOIUrl":null,"url":null,"abstract":"GeSiO nanosystems were obtained using two different preparation methods, sol-gel and magnetron-sputtering. Transmission electron microscopy measurements were performed to investigate the films structure. Amorphous and crystalline Ge dots embedded in amorphous silicon dioxide were observed. The Ge concentration in the GeSiO films was by Energy-dispersive X-ray spectroscopy.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Influence of preparation method on structural properties of GeSiO nanosystems\",\"authors\":\"I. Stavarache, A. Lepadatu, V. Teodorescu, T. Stoica, I. Pasuk, G. Stan, V. Iancu, M. Ciurea\",\"doi\":\"10.1109/SMICND.2010.5650255\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GeSiO nanosystems were obtained using two different preparation methods, sol-gel and magnetron-sputtering. Transmission electron microscopy measurements were performed to investigate the films structure. Amorphous and crystalline Ge dots embedded in amorphous silicon dioxide were observed. The Ge concentration in the GeSiO films was by Energy-dispersive X-ray spectroscopy.\",\"PeriodicalId\":377326,\"journal\":{\"name\":\"CAS 2010 Proceedings (International Semiconductor Conference)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CAS 2010 Proceedings (International Semiconductor Conference)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2010.5650255\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2010 Proceedings (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2010.5650255","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

采用溶胶-凝胶法和磁控溅射法制备了GeSiO纳米体系。透射电镜对膜的结构进行了研究。在非晶二氧化硅中嵌套了非晶和结晶Ge点。用能量色散x射线光谱测定了GeSiO薄膜中的锗浓度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Influence of preparation method on structural properties of GeSiO nanosystems

GeSiO nanosystems were obtained using two different preparation methods, sol-gel and magnetron-sputtering. Transmission electron microscopy measurements were performed to investigate the films structure. Amorphous and crystalline Ge dots embedded in amorphous silicon dioxide were observed. The Ge concentration in the GeSiO films was by Energy-dispersive X-ray spectroscopy.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

CAS 2010 Proceedings (International Semiconductor Conference)

自引率

0.00%

发文量