基于生成学习的VLSI老化快速静电分析

Subed Lamichhane, Shaoyi Peng, Wentian Jin, S. Tan
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引用次数: 1

摘要

静电分析是一种计算电势和电场的方法,对超大规模集成电路的可靠性和高速电路设计具有重要意义。深度学习为通过学习物理定律和特征表示来加速分析过程提供了新的机遇和挑战。在这项工作中,我们提出了一个图像生成学习框架,用于VLSI电介质老化估计的静电分析。这项工作利用了这样的观察,即合成的多层互连VLSI布局可以被视为分层的二维图像,而分析可以被视为图像生成。因此,利用生成学习的高效图像到图像转换特性来获得各自互连层上的势分布。与目前基于cnn的静电分析方法相比,由于减少了神经网络结构和参数,新方法的推理速度提高了1.54倍。我们演示了该方法的时变介质击穿分析,与传统的数值方法相比,该方法具有显著的加速。
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Fast Electrostatic Analysis For VLSI Aging based on Generative Learning
Electrostatic analysis, which computes electrical potential and electrical field, is important for VLSI reliability and high speed circuit design. Deep learning provides new opportunities and challenges to speedup the analysis process by learning physical laws and feature representations. In this work, we propose an image generative learning framework for electrostatic analysis for VLSI dielectric aging estimation. This work leverages the observation that the synthesized multi layer interconnect VLSI layout can be viewed as layered 2D images and the analysis can be viewed as the image generation. The efficient image-to-image translation property of generative learning is therefore used to obtain the potential distribution on the respective interconnect layers. Compared with the recent CNN-based electrostatic analysis method, the new method can lead to 1.54x speedup for inference due to reduced neural network structures and parameters. We demonstrate the proposed method for time-dependent dielectric breakdown analysis and show the significant speedup compared to the traditional numerical method.
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