{"title":"AlGaN/GaN hemt中随时间变化的电流崩溃分析","authors":"R. Maeta, H. Tokuda, M. Kuzuhara","doi":"10.1109/ASDAM.2014.6998667","DOIUrl":null,"url":null,"abstract":"We have studied current collapse in AlGaN/GaN HEMTs measured in the dark after turning off the light irradiation. The time dependence of the dynamic on-resistance was measured while keeping pulsed on/off switching sequence and energy levels of trapped electrons were measured as a function of elapsed time. The stress duration time after turning off the light is proposed to be an important factor for the precise evaluation of dynamic on-resistance.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of time dependent current collapse in AlGaN/GaN HEMTs\",\"authors\":\"R. Maeta, H. Tokuda, M. Kuzuhara\",\"doi\":\"10.1109/ASDAM.2014.6998667\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have studied current collapse in AlGaN/GaN HEMTs measured in the dark after turning off the light irradiation. The time dependence of the dynamic on-resistance was measured while keeping pulsed on/off switching sequence and energy levels of trapped electrons were measured as a function of elapsed time. The stress duration time after turning off the light is proposed to be an important factor for the precise evaluation of dynamic on-resistance.\",\"PeriodicalId\":313866,\"journal\":{\"name\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2014.6998667\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998667","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of time dependent current collapse in AlGaN/GaN HEMTs
We have studied current collapse in AlGaN/GaN HEMTs measured in the dark after turning off the light irradiation. The time dependence of the dynamic on-resistance was measured while keeping pulsed on/off switching sequence and energy levels of trapped electrons were measured as a function of elapsed time. The stress duration time after turning off the light is proposed to be an important factor for the precise evaluation of dynamic on-resistance.
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