PLD生长VO2薄膜的电学性质

F. Mendoza, F. Fernandez
{"title":"PLD生长VO2薄膜的电学性质","authors":"F. Mendoza, F. Fernandez","doi":"10.1109/ISAF.2008.4693843","DOIUrl":null,"url":null,"abstract":"A set of electronic instrumentation was configured to perform measurements of resistivity and Hall coefficient based on the four-point van der Pauw technique. Measurements were performed on silicon wafer and vanadium dioxide thin films. The abrupt change in resistivity at the critical semiconductor to metal transition temperature, by up to five orders of magnitude, was verified for VO2 thin films grown by pulsed laser deposition on sapphire substrate, and lower for films grown on MgO on glass substrates. For the sample grown on sapphire other transport properties for, obtained through Hall effect measurements, were obtained.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"292 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical properties of VO2 thin films grown by PLD\",\"authors\":\"F. Mendoza, F. Fernandez\",\"doi\":\"10.1109/ISAF.2008.4693843\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A set of electronic instrumentation was configured to perform measurements of resistivity and Hall coefficient based on the four-point van der Pauw technique. Measurements were performed on silicon wafer and vanadium dioxide thin films. The abrupt change in resistivity at the critical semiconductor to metal transition temperature, by up to five orders of magnitude, was verified for VO2 thin films grown by pulsed laser deposition on sapphire substrate, and lower for films grown on MgO on glass substrates. For the sample grown on sapphire other transport properties for, obtained through Hall effect measurements, were obtained.\",\"PeriodicalId\":228914,\"journal\":{\"name\":\"2008 17th IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"292 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 17th IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2008.4693843\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2008.4693843","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

基于四点范德波法,配置了一套电子仪器来测量电阻率和霍尔系数。对硅片和二氧化钒薄膜进行了测量。在蓝宝石衬底上脉冲激光沉积的VO2薄膜的电阻率突变高达5个数量级,而在玻璃衬底上生长的MgO薄膜的电阻率突变更低。对于生长在蓝宝石上的样品,通过霍尔效应测量获得了其他输运性质。
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Electrical properties of VO2 thin films grown by PLD
A set of electronic instrumentation was configured to perform measurements of resistivity and Hall coefficient based on the four-point van der Pauw technique. Measurements were performed on silicon wafer and vanadium dioxide thin films. The abrupt change in resistivity at the critical semiconductor to metal transition temperature, by up to five orders of magnitude, was verified for VO2 thin films grown by pulsed laser deposition on sapphire substrate, and lower for films grown on MgO on glass substrates. For the sample grown on sapphire other transport properties for, obtained through Hall effect measurements, were obtained.
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