透射型EBSD在高形貌铝薄膜上的应用

Songbai Zhang, Yaojiang Zhang, W. M. Kwek, L. Goi, A. Trigg, L. Tang
{"title":"透射型EBSD在高形貌铝薄膜上的应用","authors":"Songbai Zhang, Yaojiang Zhang, W. M. Kwek, L. Goi, A. Trigg, L. Tang","doi":"10.1109/EPTC.2014.7028394","DOIUrl":null,"url":null,"abstract":"Recent development of Electron Backscattering Diffraction (EBSD) technique has advanced to allow users to perform Transmission Kikuchi diffraction (TKD), and also known as transmission-EBSD (t-EBSD) with the existing conventional EBSD detector, and field emission scanning electron microscope (FESEM). More importantly, this technique has been known for the significant improvement in spatial resolution. In this paper, this technique has been employed to characterize a high topography surface Aluminum sample containing submicron or smaller grain sizes, which is a limitation to the conventional EBSD method because a conventional EBSD method requires relative smooth and flat surfaces. The objective of this paper is to illustrate the successful employment of t-EBSD technique, to obtain the mean grain size of Aluminum prepared by Physical Vapour Deposition (PVD), as well as to determine percentage of grains orientation grown in <;111> parallel to the growth direction to the silicon substrate or simply the normal direction (ND) as specify in during the ESBD analysis run. This paper will account on how the sample was prepared by means of FIB to achieve and electron transparent TEM foil. Results has shown that 81% of the desired <;111> orientation parallel to the ND direction (i.e. <;111>//ND) and a mean grain size of 0.317um were determined, with more than 50% of the area mapped contain grains equivalent diameter less than submicron size. Therefore, t-EBSD is a relatively effective application towards this study because this does not compromise on the spatial resolution less than submicron scales.","PeriodicalId":115713,"journal":{"name":"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Application of transmission EBSD on high topography surface Aluminum thin film\",\"authors\":\"Songbai Zhang, Yaojiang Zhang, W. M. Kwek, L. Goi, A. Trigg, L. Tang\",\"doi\":\"10.1109/EPTC.2014.7028394\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent development of Electron Backscattering Diffraction (EBSD) technique has advanced to allow users to perform Transmission Kikuchi diffraction (TKD), and also known as transmission-EBSD (t-EBSD) with the existing conventional EBSD detector, and field emission scanning electron microscope (FESEM). More importantly, this technique has been known for the significant improvement in spatial resolution. In this paper, this technique has been employed to characterize a high topography surface Aluminum sample containing submicron or smaller grain sizes, which is a limitation to the conventional EBSD method because a conventional EBSD method requires relative smooth and flat surfaces. The objective of this paper is to illustrate the successful employment of t-EBSD technique, to obtain the mean grain size of Aluminum prepared by Physical Vapour Deposition (PVD), as well as to determine percentage of grains orientation grown in <;111> parallel to the growth direction to the silicon substrate or simply the normal direction (ND) as specify in during the ESBD analysis run. This paper will account on how the sample was prepared by means of FIB to achieve and electron transparent TEM foil. Results has shown that 81% of the desired <;111> orientation parallel to the ND direction (i.e. <;111>//ND) and a mean grain size of 0.317um were determined, with more than 50% of the area mapped contain grains equivalent diameter less than submicron size. Therefore, t-EBSD is a relatively effective application towards this study because this does not compromise on the spatial resolution less than submicron scales.\",\"PeriodicalId\":115713,\"journal\":{\"name\":\"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPTC.2014.7028394\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2014.7028394","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

电子后向散射衍射(EBSD)技术的最新发展已经允许用户使用现有的传统EBSD探测器和场发射扫描电子显微镜(FESEM)进行传输菊池衍射(TKD),也称为传输-EBSD (t-EBSD)。更重要的是,该技术以显著提高空间分辨率而闻名。在本文中,该技术已被用于表征含有亚微米或更小晶粒尺寸的高形貌表面铝样品,这是传统EBSD方法的局限性,因为传统EBSD方法需要相对光滑和平坦的表面。本文的目的是说明t-EBSD技术的成功应用,以获得物理气相沉积(PVD)制备的铝的平均晶粒尺寸,以及确定与硅衬底生长方向平行生长的晶粒取向的百分比,或者仅仅是在ESBD分析运行中指定的法向(ND)。本文将介绍如何利用FIB制备样品以实现电子透明透射电镜箔。结果表明,81%的期望取向平行于ND方向(即//ND),平均晶粒尺寸为0.317um,超过50%的测绘面积包含等效直径小于亚微米的晶粒。因此,t-EBSD是一种相对有效的应用,因为它不影响小于亚微米尺度的空间分辨率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Application of transmission EBSD on high topography surface Aluminum thin film
Recent development of Electron Backscattering Diffraction (EBSD) technique has advanced to allow users to perform Transmission Kikuchi diffraction (TKD), and also known as transmission-EBSD (t-EBSD) with the existing conventional EBSD detector, and field emission scanning electron microscope (FESEM). More importantly, this technique has been known for the significant improvement in spatial resolution. In this paper, this technique has been employed to characterize a high topography surface Aluminum sample containing submicron or smaller grain sizes, which is a limitation to the conventional EBSD method because a conventional EBSD method requires relative smooth and flat surfaces. The objective of this paper is to illustrate the successful employment of t-EBSD technique, to obtain the mean grain size of Aluminum prepared by Physical Vapour Deposition (PVD), as well as to determine percentage of grains orientation grown in <;111> parallel to the growth direction to the silicon substrate or simply the normal direction (ND) as specify in during the ESBD analysis run. This paper will account on how the sample was prepared by means of FIB to achieve and electron transparent TEM foil. Results has shown that 81% of the desired <;111> orientation parallel to the ND direction (i.e. <;111>//ND) and a mean grain size of 0.317um were determined, with more than 50% of the area mapped contain grains equivalent diameter less than submicron size. Therefore, t-EBSD is a relatively effective application towards this study because this does not compromise on the spatial resolution less than submicron scales.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Influence of the height of Carbon Nanotubes on hot switching of Au/Cr-Au/MWCNT contact pairs Laminating thin glass onto glass carrier to eliminate grinding and bonding process for glass interposer A robust chip capacitor for video band width in RF power amplifiers Chip scale package with low cost substrate evaluation and characterization Methodology for more accurate assessment of heat loss in microchannel flow boiling
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1