高热稳定性模具材料对环氧封装VLSI器件金铝结合可靠性的影响

Muhib M. Khan, H. Fatemi, J. Romero, Eugene A. Delenia
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引用次数: 22

摘要

由特制的溴化剂溴化的甲酚环氧树脂,赋予高的C-Br键能,为密封剂提供了增强的热稳定性。在190至250摄氏度的等温烘烤下,实验封装剂的分解时间比最先进的商业材料长三到四倍。在一些实验材料中发现了卤化有机残留物的存在,通过金属间质的降解导致金铝线结合失败增加。这些残留物是树脂合成的副产物,通过化学改性和加工消除了这些残留物。经过这种改性后,卤素诱导的失效时间比商用树脂延长了80%。键破坏的表观活化能为0.8 eV,与有机卤化物在水环境中通过聚合物基体的扩散活化能相当,这是通过水离子萃取测定的。研究发现,树脂中C-Br键的高热稳定性以及卤化有机残留物材料的纯度对于环氧塑料封装VLSI器件中铝金属化和金线键的高可靠性至关重要。
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Effect of high thermal stability mold material on the gold-aluminum bond reliability in epoxy encapsulated VLSI devices
Cresolic epoxy novolac resins brominated by specially tailored brominating agents to impart a high C-Br bond energy have provided encapsulants with enhanced thermal stability. By isothermal bakes at temperatures from 190 to 250 degrees C, decomposition times of the experimental encapsulants were found to be three to four times longer than of a state-of-the-art commercial material. The presence of halogenated organic residues among some of the experimental materials was found to cause increased gold-aluminum wire-bond failure through degradation of the intermetallic. These residues were byproducts of resin synthesis, which were eliminated by modification of the chemistry and processing. After such modification, the halogen-induced failure time was found to be prolonged by as much as 80% compared to a commercial resin. The apparent activation energy of bond failure was 0.8 eV, which was found to equal that of diffusion of organic halide through the polymer matrix in an aqueous environment, as determined by aqueous ion extraction. High thermal stability of the C-Br bond in the resins as well as purity of the material from halogenated organic residues was found to be crucial for superior reliability of aluminum metallization and gold wire bond in epoxy plastic-encapsulated VLSI devices.<>
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