M. Urteaga, R. Pierson, P. Rowell, V. Jain, E. Lobisser, M. Rodwell
{"title":"130nm InP dhbt, ft >0.52THz, fmax >1.1THz","authors":"M. Urteaga, R. Pierson, P. Rowell, V. Jain, E. Lobisser, M. Rodwell","doi":"10.1109/DRC.2011.5994532","DOIUrl":null,"url":null,"abstract":"We report results from a 130nm Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. A 0.13×2µm<sup>2</sup> transistor exhibits a current gain cutoff frequency ft >520GHz, with a simultaneous extrapolated power gain cutoff frequency f<inf>max</inf>>1.1THz. The HBTs exhibit these RF figures-of-merit while maintaining a common-emitter breakdown voltage BV<inf>CEO</inf>=3.5V (J<inf>E</inf>=10µA/µm<sup>2</sup>). Additionally, scaling of the emitter junction length to 2µm enables high device performance at low total power levels. Transistors in the InGaAs/InP material system have demonstrated the highest reported transistor RF figures-of-merit. Previous published results include strained-InGaAs channel high-electron mobility transistors (HEMTs) with f<inf>max</inf> of >1THz [1,2], and InP DHBTs with f<inf>max</inf> >800GHz [3]. High bandwidth DHBTs have applications in a number of RF and mixed-signal applications due to their high power handling and high levels of integration relative to HEMTs. The HBTs reported in this work are designed for transceiver applications at the lower end of the THz frequency band [0.3–3 THz].","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"87","resultStr":"{\"title\":\"130nm InP DHBTs with ft >0.52THz and fmax >1.1THz\",\"authors\":\"M. Urteaga, R. Pierson, P. Rowell, V. Jain, E. Lobisser, M. Rodwell\",\"doi\":\"10.1109/DRC.2011.5994532\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report results from a 130nm Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. A 0.13×2µm<sup>2</sup> transistor exhibits a current gain cutoff frequency ft >520GHz, with a simultaneous extrapolated power gain cutoff frequency f<inf>max</inf>>1.1THz. The HBTs exhibit these RF figures-of-merit while maintaining a common-emitter breakdown voltage BV<inf>CEO</inf>=3.5V (J<inf>E</inf>=10µA/µm<sup>2</sup>). Additionally, scaling of the emitter junction length to 2µm enables high device performance at low total power levels. Transistors in the InGaAs/InP material system have demonstrated the highest reported transistor RF figures-of-merit. Previous published results include strained-InGaAs channel high-electron mobility transistors (HEMTs) with f<inf>max</inf> of >1THz [1,2], and InP DHBTs with f<inf>max</inf> >800GHz [3]. High bandwidth DHBTs have applications in a number of RF and mixed-signal applications due to their high power handling and high levels of integration relative to HEMTs. The HBTs reported in this work are designed for transceiver applications at the lower end of the THz frequency band [0.3–3 THz].\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"87\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994532\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994532","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We report results from a 130nm Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. A 0.13×2µm2 transistor exhibits a current gain cutoff frequency ft >520GHz, with a simultaneous extrapolated power gain cutoff frequency fmax>1.1THz. The HBTs exhibit these RF figures-of-merit while maintaining a common-emitter breakdown voltage BVCEO=3.5V (JE=10µA/µm2). Additionally, scaling of the emitter junction length to 2µm enables high device performance at low total power levels. Transistors in the InGaAs/InP material system have demonstrated the highest reported transistor RF figures-of-merit. Previous published results include strained-InGaAs channel high-electron mobility transistors (HEMTs) with fmax of >1THz [1,2], and InP DHBTs with fmax >800GHz [3]. High bandwidth DHBTs have applications in a number of RF and mixed-signal applications due to their high power handling and high levels of integration relative to HEMTs. The HBTs reported in this work are designed for transceiver applications at the lower end of the THz frequency band [0.3–3 THz].