STT-MRAM单元中分离复杂几何结构的有效退磁场计算

J. Ender, Mohamed Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov
{"title":"STT-MRAM单元中分离复杂几何结构的有效退磁场计算","authors":"J. Ender, Mohamed Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov","doi":"10.23919/SISPAD49475.2020.9241662","DOIUrl":null,"url":null,"abstract":"Micromagnetic simulations of MRAM cells are a computationally demanding task. Different methods exist to handle the computational complexity of the demagnetizing field, the most expensive magnetic field contribution. In this work we show how the demagnetizing field can efficiently be calculated in complex memory structures and how this procedure can be further used to simulate spin-transfer torque switching in magnetic tunnel junctions.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"62 9","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells\",\"authors\":\"J. Ender, Mohamed Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov\",\"doi\":\"10.23919/SISPAD49475.2020.9241662\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Micromagnetic simulations of MRAM cells are a computationally demanding task. Different methods exist to handle the computational complexity of the demagnetizing field, the most expensive magnetic field contribution. In this work we show how the demagnetizing field can efficiently be calculated in complex memory structures and how this procedure can be further used to simulate spin-transfer torque switching in magnetic tunnel junctions.\",\"PeriodicalId\":206964,\"journal\":{\"name\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"62 9\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SISPAD49475.2020.9241662\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SISPAD49475.2020.9241662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

摘要

MRAM细胞的微磁模拟是一项计算要求很高的任务。有不同的方法来处理退磁场的计算复杂性,这是最昂贵的磁场贡献。在这项工作中,我们展示了如何在复杂的存储结构中有效地计算退磁场,以及如何进一步使用该程序来模拟磁隧道结中的自旋传递转矩开关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells
Micromagnetic simulations of MRAM cells are a computationally demanding task. Different methods exist to handle the computational complexity of the demagnetizing field, the most expensive magnetic field contribution. In this work we show how the demagnetizing field can efficiently be calculated in complex memory structures and how this procedure can be further used to simulate spin-transfer torque switching in magnetic tunnel junctions.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Power Device Degradation Estimation by Machine Learning of Gate Waveforms Numerical Solution of the Constrained Wigner Equation Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and Below Fully Analog ReRAM Neuromorphic Circuit Optimization using DTCO Simulation Framework Analytical Formulae for the Surface Green’s Functions of Graphene and 1T’ MoS2 Nanoribbons
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1