{"title":"SiC功率器件功率转换电路的电磁干扰特性","authors":"T. Ibuchi, T. Funaki","doi":"10.1109/ATS49688.2020.9301613","DOIUrl":null,"url":null,"abstract":"The fast switching characteristics of silicon carbide (SiC) power devices can be expected to realize low losses, light weight, and compact power converters. However, high dv/dt and di/dt during switching transients raise the concerns of electromagnetic interference (EMI) for high-power converters. This report focuses on the switching characteristics of SiC power devices, and discusses the relationship between their transient characteristics and EMI noise sources for power conversion circuit.","PeriodicalId":220508,"journal":{"name":"2020 IEEE 29th Asian Test Symposium (ATS)","volume":"134 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"EMI characterization for power conversion circuit with SiC power devices\",\"authors\":\"T. Ibuchi, T. Funaki\",\"doi\":\"10.1109/ATS49688.2020.9301613\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The fast switching characteristics of silicon carbide (SiC) power devices can be expected to realize low losses, light weight, and compact power converters. However, high dv/dt and di/dt during switching transients raise the concerns of electromagnetic interference (EMI) for high-power converters. This report focuses on the switching characteristics of SiC power devices, and discusses the relationship between their transient characteristics and EMI noise sources for power conversion circuit.\",\"PeriodicalId\":220508,\"journal\":{\"name\":\"2020 IEEE 29th Asian Test Symposium (ATS)\",\"volume\":\"134 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE 29th Asian Test Symposium (ATS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ATS49688.2020.9301613\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 29th Asian Test Symposium (ATS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ATS49688.2020.9301613","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
EMI characterization for power conversion circuit with SiC power devices
The fast switching characteristics of silicon carbide (SiC) power devices can be expected to realize low losses, light weight, and compact power converters. However, high dv/dt and di/dt during switching transients raise the concerns of electromagnetic interference (EMI) for high-power converters. This report focuses on the switching characteristics of SiC power devices, and discusses the relationship between their transient characteristics and EMI noise sources for power conversion circuit.
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