带有嵌入式电阻的先进Mcm-d

D. Scheid
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引用次数: 5

摘要

本文描述了一种薄膜工艺,该工艺用于使用标准IC设备制造高性能Cu/PI MCM-D,该设备采用嵌入式TiW薄膜电阻器,经过修改以处理方形衬底。已经生产了数千个具有卓越交流和直流特性的MCM。这些MCM连接到一个更大的MCM- l基板上,作为逻辑模块测试仪,能够超过600 MHz的工作。每个MCM提供4个大型ECL门阵列,9个去耦电容器和18个电阻网络的互连。通过将电阻器集成到薄膜堆中,可以实现更好的性能和成本节约。这是由于寄生减少,可达性增加和组件减少的结果。MCM薄膜由沉积在玻璃陶瓷基板上的8层金属层(4层布线,3层电源接地和1层电阻形成)组成。米高梅的尺寸为4.6 cm/sup 2/,有超过15米的薄膜路由,有2000个孔/cm/sup 2/。
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Advanced Mcm-d With Embedded Resistors
This paper describes a thin film process that was developed for fabricating a high performance Cu/PI MCM-D with embedded TiW thin film resistors using standard IC equipment, modified to handle square substrates. Several thousand MCM's have been produced with exceptional AC and DC characteristics. These MCM's were attached to a larger MCM-L substrate that functioned as a logic module tester, capable of greater than 600 MHz operation. Each MCM provided for interconnection of 4 large ECL gate arrays, 9 decoupling capacitors and 18 resistor networks. By integrating the resistors into the thin film stack better performance and cost savings could be achieved. This was a result of the reduced parasitics, increased routability and component reduction. The MCM thin film consisted of 8 metal layers (4 routing, 3 power-ground and I for resistor formation) deposited on a glass ceramic substrate. The MGM measures 4.6 cm/sup 2/ and has more than 15 meters of thin film routing available with 2,000 vias/cm/sup 2/.
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