{"title":"具有高击穿和高功率特性的低噪声AlGaN/GaN modfet","authors":"S. Hsu, D. Pavlidis","doi":"10.1109/GAAS.2001.964384","DOIUrl":null,"url":null,"abstract":"AlGaN/GaN MODFETs (0.25/spl times/200 /spl mu/m/sup 2/) with low noise, high breakdown and power characteristics have been evaluated. A noise figure of 1.9 dB with 16.2 dB associated gain was obtained at a quiescent point of I/sub DS/=30 mA. and V/sub DS/=10 at 10 GHz. The maximum power measured was 22.9 dBm (/spl sim/1 W/mrn) and PAE was 21.9% at 8.4 GHz at the same bias condition. In addition, a maximum breakdown voltage (V/sub BD/) of /spl sim/115 V at I/sub D/=20 /spl mu/A and I/sub G//spl sim/30 /spl mu/A was measured. A MODFET noise model and its correlation with gate leakage current are also investigated.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Low noise AlGaN/GaN MODFETs with high breakdown and power characteristics\",\"authors\":\"S. Hsu, D. Pavlidis\",\"doi\":\"10.1109/GAAS.2001.964384\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlGaN/GaN MODFETs (0.25/spl times/200 /spl mu/m/sup 2/) with low noise, high breakdown and power characteristics have been evaluated. A noise figure of 1.9 dB with 16.2 dB associated gain was obtained at a quiescent point of I/sub DS/=30 mA. and V/sub DS/=10 at 10 GHz. The maximum power measured was 22.9 dBm (/spl sim/1 W/mrn) and PAE was 21.9% at 8.4 GHz at the same bias condition. In addition, a maximum breakdown voltage (V/sub BD/) of /spl sim/115 V at I/sub D/=20 /spl mu/A and I/sub G//spl sim/30 /spl mu/A was measured. A MODFET noise model and its correlation with gate leakage current are also investigated.\",\"PeriodicalId\":269944,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2001.964384\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964384","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low noise AlGaN/GaN MODFETs with high breakdown and power characteristics
AlGaN/GaN MODFETs (0.25/spl times/200 /spl mu/m/sup 2/) with low noise, high breakdown and power characteristics have been evaluated. A noise figure of 1.9 dB with 16.2 dB associated gain was obtained at a quiescent point of I/sub DS/=30 mA. and V/sub DS/=10 at 10 GHz. The maximum power measured was 22.9 dBm (/spl sim/1 W/mrn) and PAE was 21.9% at 8.4 GHz at the same bias condition. In addition, a maximum breakdown voltage (V/sub BD/) of /spl sim/115 V at I/sub D/=20 /spl mu/A and I/sub G//spl sim/30 /spl mu/A was measured. A MODFET noise model and its correlation with gate leakage current are also investigated.
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