{"title":"光纤通信中光电器件的可靠性","authors":"L. Chiu, K. Li, D. Pendse, H.C. Lee, C. Fern","doi":"10.1109/ARMS.1990.67954","DOIUrl":null,"url":null,"abstract":"Addressed are fundamental issues related to the reliability of three key optoelectronic devices for long-wavelength fiberoptic communications: InGaAsP LEDs, lasers, and PIN detectors. Degradation modes associated with metallization, crystal growth, device structure, and passivation materials are discussed. It is shown that with proper burn-in and screening, highly reliable devices can be manufactured.<<ETX>>","PeriodicalId":383597,"journal":{"name":"Annual Proceedings on Reliability and Maintainability Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reliability of optoelectronic devices for fiber optic communications\",\"authors\":\"L. Chiu, K. Li, D. Pendse, H.C. Lee, C. Fern\",\"doi\":\"10.1109/ARMS.1990.67954\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Addressed are fundamental issues related to the reliability of three key optoelectronic devices for long-wavelength fiberoptic communications: InGaAsP LEDs, lasers, and PIN detectors. Degradation modes associated with metallization, crystal growth, device structure, and passivation materials are discussed. It is shown that with proper burn-in and screening, highly reliable devices can be manufactured.<<ETX>>\",\"PeriodicalId\":383597,\"journal\":{\"name\":\"Annual Proceedings on Reliability and Maintainability Symposium\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-01-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Annual Proceedings on Reliability and Maintainability Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARMS.1990.67954\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Annual Proceedings on Reliability and Maintainability Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARMS.1990.67954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability of optoelectronic devices for fiber optic communications
Addressed are fundamental issues related to the reliability of three key optoelectronic devices for long-wavelength fiberoptic communications: InGaAsP LEDs, lasers, and PIN detectors. Degradation modes associated with metallization, crystal growth, device structure, and passivation materials are discussed. It is shown that with proper burn-in and screening, highly reliable devices can be manufactured.<>