三聚II DRAM存储单元

K. Yang, K. Smits, E. Haq, M. Embrathiry, A. Varadi
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引用次数: 2

摘要

利用传统的处理技术,已经开发出一种几乎利用整个单元面积作为存储电容器的DRAM单元。因此,即使使用300adi电材料,存储电容也比先前报道的256K DRAM单元提供了更好的结果。而且,在不使用双金属处理器或多行解码器的情况下,性能升级成为可能。单元格的布局如图1所示。埋藏的扩散位线由一个额外的掩蔽步骤形成,使位线能够在Poly 1沉积和正常的源/漏植入物之前被植入和氧化。聚1字线在聚1和有源区域重叠的区域形成存取晶体管,没有位线植入。以这种方式,多聚1字线能够穿过埋藏的位线而不形成晶体管。Poly 1也为外围电路形成晶体管。存储电容器极板由聚2和聚3组成。poly2板通过埋设触点连接到接入晶体管的源端。由于poly2电容器板位于字线、位线和接入晶体管的顶部,它们可以占据整个单元区域。唯一的限制是相邻电容器之间的物理间距。所有存储电容器的公共终端是覆盖整个电池区域的聚3薄膜。金属线用于连接存储单元区域外的Poly 1字线,并且仅在所需的间隔内连接。
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Triple poly II DRAM memory cell
USING CONVENTIONAL PROCESSING techniques, a DRAM cell utilizing almost the entire cell area for the storage capacitor, has been developed. Thus, even with 300adielectric material, the storage capacitance has been found to provide improved results over prcviously reported 256K DRAM cell^"^'^. And without using s i l i ~ i d e s ~ ’ ~ ’ ~ double metal process2 or multiple row decoders4, upgraded performance has been possible. The layout of the cell is shown in Figure 1. Buried diffused bit lines are formed by an additional masking step that enables the bit lines to be implanted and oxidized prior to the deposition of Poly 1 and normal source/ drain implant. Poly 1 word lines form access transistors at areas where Poly 1 and active areas overlap with no bit line implant. In this manner Poly 1 word lines are able to cross buried bit lines without forming transistors. Poly 1 also forms transistors for the peripheral circuitry. Storage capacitor plates are formed by Poly 2 and Poly 3. The Poly 2 plate is connected to the sourcc of the access transistor by means of a buried contact. Since the Poly 2 capacitor plates lie on top of the word lines, bit lines, and access transistors, they can occupy the entire cell area. The only limitation is the physical spacing between adjacent capacitors. The common terminal for all storage capacitors is a sheet of Poly 3 covering the entire cell area. Metal lines are used to connect Poly 1 word lines outside the memory cell areas and only at desired intervals.
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