一个1Mb的EPROM

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1984.1156663

K. Okumura, S. Ohya, M. Yamamoto, T. Watanabe, Y. Shimamura, M. Kikuchi

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引用次数: 6

摘要

将讨论采用1.2μm设计规则技术的1Mb全静态EPROM。该芯片的典型存取时间为200ns，编程电压约为13V，可作为64K × 16或128K × 8组织使用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 1Mb EPROM

A 1Mb fully static EPROM utilizing a 1.2μm design rule technology will be discussed. The chip features typical access time of 200ns, a programming voltage of approximately 13V, and can be used either as 64K × 16 or 128K × 8 organization.

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1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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