Impact of AlGaN Doping Concentration on the Analog/RF Performance of a Double Gate Underlap n-AlGaN/GaN MOSHEMT

With a well calibrated TCAD Simulator, this paper characterizes a novel n-AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) with a double gate symmetric underlapped structure. Detailed Analog, Power Gain and RF Parameters have been studied by varying the AlGaN doping concentration from undoped to 5x1018/cm3. These enhanced hetero-structures display superior performance in high frequency and low power applications compared to conventional HEMT and MOSFET devices.