{"title":"无源器件的统计模型和频率相关角模型","authors":"N. Lu","doi":"10.1109/ISQED.2008.125","DOIUrl":null,"url":null,"abstract":"We present the statistical SPICE models and associated corner models of passive devices (such as capacitors and resistors) in VLSI semiconductor technologies. The capacitor devices include decoupling capacitors, metal- insulator-metal capacitors (MIMCAPs), junction capacitors, MOS varactors, BEOL metal capacitors, etc. The resistor devices include diffused resistors, silicide blocked polysilicon resistors, BEOL resistors, etc. We present correct statistical models and optimal corner models, and discuss the correctness and goodness of various statistical models and corner models. We explicitly show the dependency of the corner model parameters on the device length/width. For a fixed device length and width, for the first time, we show the dependency of the corner model parameters on the frequency, and show that the skewing direction of some corner model parameters will change their signs when going from the low frequency region to the high frequency/RF region.","PeriodicalId":243121,"journal":{"name":"9th International Symposium on Quality Electronic Design (isqed 2008)","volume":"347 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Statistical Models and Frequency-Dependent Corner Models for Passive Devices\",\"authors\":\"N. Lu\",\"doi\":\"10.1109/ISQED.2008.125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the statistical SPICE models and associated corner models of passive devices (such as capacitors and resistors) in VLSI semiconductor technologies. The capacitor devices include decoupling capacitors, metal- insulator-metal capacitors (MIMCAPs), junction capacitors, MOS varactors, BEOL metal capacitors, etc. The resistor devices include diffused resistors, silicide blocked polysilicon resistors, BEOL resistors, etc. We present correct statistical models and optimal corner models, and discuss the correctness and goodness of various statistical models and corner models. We explicitly show the dependency of the corner model parameters on the device length/width. For a fixed device length and width, for the first time, we show the dependency of the corner model parameters on the frequency, and show that the skewing direction of some corner model parameters will change their signs when going from the low frequency region to the high frequency/RF region.\",\"PeriodicalId\":243121,\"journal\":{\"name\":\"9th International Symposium on Quality Electronic Design (isqed 2008)\",\"volume\":\"347 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-03-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"9th International Symposium on Quality Electronic Design (isqed 2008)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2008.125\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Symposium on Quality Electronic Design (isqed 2008)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2008.125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Statistical Models and Frequency-Dependent Corner Models for Passive Devices
We present the statistical SPICE models and associated corner models of passive devices (such as capacitors and resistors) in VLSI semiconductor technologies. The capacitor devices include decoupling capacitors, metal- insulator-metal capacitors (MIMCAPs), junction capacitors, MOS varactors, BEOL metal capacitors, etc. The resistor devices include diffused resistors, silicide blocked polysilicon resistors, BEOL resistors, etc. We present correct statistical models and optimal corner models, and discuss the correctness and goodness of various statistical models and corner models. We explicitly show the dependency of the corner model parameters on the device length/width. For a fixed device length and width, for the first time, we show the dependency of the corner model parameters on the frequency, and show that the skewing direction of some corner model parameters will change their signs when going from the low frequency region to the high frequency/RF region.