{"title":"光电器件中过量噪声研究的一般结果及其在提高器件性能中的应用","authors":"N. Lukyanchikova","doi":"10.1109/EDMO.1995.493690","DOIUrl":null,"url":null,"abstract":"The properties of the excess noise observed in a wide variety of optoelectronic devices based on homo- and heterojunctions in III-V and II-VI compounds are considered. It is shown that rather universal mechanism is responsible for this noise and its model is described. A number of technical applications of the results of measurements of this noise is presented and discussed.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"194 12","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"General results of investigation of the excess noise in optoelectronic devices and their application for improving the device performance\",\"authors\":\"N. Lukyanchikova\",\"doi\":\"10.1109/EDMO.1995.493690\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The properties of the excess noise observed in a wide variety of optoelectronic devices based on homo- and heterojunctions in III-V and II-VI compounds are considered. It is shown that rather universal mechanism is responsible for this noise and its model is described. A number of technical applications of the results of measurements of this noise is presented and discussed.\",\"PeriodicalId\":431745,\"journal\":{\"name\":\"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95\",\"volume\":\"194 12\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDMO.1995.493690\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.1995.493690","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
General results of investigation of the excess noise in optoelectronic devices and their application for improving the device performance
The properties of the excess noise observed in a wide variety of optoelectronic devices based on homo- and heterojunctions in III-V and II-VI compounds are considered. It is shown that rather universal mechanism is responsible for this noise and its model is described. A number of technical applications of the results of measurements of this noise is presented and discussed.
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