后cmos器件和架构的挑战

J. Welser, K. Bernstein
{"title":"后cmos器件和架构的挑战","authors":"J. Welser, K. Bernstein","doi":"10.1109/DRC.2011.5994480","DOIUrl":null,"url":null,"abstract":"Since 2006, the Nanoelectronics Research Initiative (NRI) has been actively funding work at universities across the U.S. with one specific mission: Demonstrate novel computing devices capable of replacing the CMOS FET as a logic switch in the 2020 timeframe. These devices must show significant advantage over FETs in power, performance, density, and/or cost to enable the semiconductor industry to extend the historical cost and performance trends for information technology. NRI seeks to find not just a one generation improvement on the FET, but rather a new extended scaling path. This is crucial to justify the expense of making any major change in the current technology infrastructure (both at the device and design level) - and the larger the change, the more benefit and longevity the new technology must offer.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Challenges for post-CMOS devices & architectures\",\"authors\":\"J. Welser, K. Bernstein\",\"doi\":\"10.1109/DRC.2011.5994480\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Since 2006, the Nanoelectronics Research Initiative (NRI) has been actively funding work at universities across the U.S. with one specific mission: Demonstrate novel computing devices capable of replacing the CMOS FET as a logic switch in the 2020 timeframe. These devices must show significant advantage over FETs in power, performance, density, and/or cost to enable the semiconductor industry to extend the historical cost and performance trends for information technology. NRI seeks to find not just a one generation improvement on the FET, but rather a new extended scaling path. This is crucial to justify the expense of making any major change in the current technology infrastructure (both at the device and design level) - and the larger the change, the more benefit and longevity the new technology must offer.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994480\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994480","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

自2006年以来,纳米电子研究计划(NRI)一直在积极资助美国各大学的工作,其中一个具体任务是:在2020年的时间框架内展示能够取代CMOS场效应晶体管作为逻辑开关的新型计算设备。这些器件必须在功率、性能、密度和/或成本方面比fet具有显著的优势,才能使半导体工业能够延续信息技术的历史成本和性能趋势。NRI寻求的不仅仅是对FET的一代改进,而是一种新的扩展缩放路径。这对于证明对当前技术基础设施(在设备和设计层面)进行任何重大更改的成本是至关重要的,而且更改越大,新技术必须提供的好处和寿命就越长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Challenges for post-CMOS devices & architectures
Since 2006, the Nanoelectronics Research Initiative (NRI) has been actively funding work at universities across the U.S. with one specific mission: Demonstrate novel computing devices capable of replacing the CMOS FET as a logic switch in the 2020 timeframe. These devices must show significant advantage over FETs in power, performance, density, and/or cost to enable the semiconductor industry to extend the historical cost and performance trends for information technology. NRI seeks to find not just a one generation improvement on the FET, but rather a new extended scaling path. This is crucial to justify the expense of making any major change in the current technology infrastructure (both at the device and design level) - and the larger the change, the more benefit and longevity the new technology must offer.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Technical program committee Rump sessions Circuit applications based on solution-processed zinc-tin oxide TFTs 1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance Effect of disorder on superfluidity in double layer graphene
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1