{"title":"集成CMOS亚太赫兹成像仪阵列","authors":"P. Foldesy, Á. Zarándy","doi":"10.1109/CNNA.2012.6331457","DOIUrl":null,"url":null,"abstract":"This paper describes the of a 90 nm CMOS sub-THz detector array ASIC. The sub-THz detector array is an integrated system composed of silicon field effect plasma wave sensors, various integrated antennas, pre-amplifiers, ADCs, and digital domain lock-in amplifier detector. The peak responsivity is found 185 kV/W@365 GHz and 52 kV/W@470 GHz and at the detectivity maximum NEP ~ 20 pW/Hz-1.","PeriodicalId":387536,"journal":{"name":"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Integrated CMOS sub-THz imager array\",\"authors\":\"P. Foldesy, Á. Zarándy\",\"doi\":\"10.1109/CNNA.2012.6331457\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the of a 90 nm CMOS sub-THz detector array ASIC. The sub-THz detector array is an integrated system composed of silicon field effect plasma wave sensors, various integrated antennas, pre-amplifiers, ADCs, and digital domain lock-in amplifier detector. The peak responsivity is found 185 kV/W@365 GHz and 52 kV/W@470 GHz and at the detectivity maximum NEP ~ 20 pW/Hz-1.\",\"PeriodicalId\":387536,\"journal\":{\"name\":\"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CNNA.2012.6331457\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CNNA.2012.6331457","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper describes the of a 90 nm CMOS sub-THz detector array ASIC. The sub-THz detector array is an integrated system composed of silicon field effect plasma wave sensors, various integrated antennas, pre-amplifiers, ADCs, and digital domain lock-in amplifier detector. The peak responsivity is found 185 kV/W@365 GHz and 52 kV/W@470 GHz and at the detectivity maximum NEP ~ 20 pW/Hz-1.
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