32nm technology node Double-Gate SOI MOSFET using SiO2 gate stacks

State of the art device simulation is applied to the analysis of possible scaling strategies for the future CMOS technology, adopting the Ultra-Thin Silicon Body Double-Gate (UTB-DG) MOSFET. n-MOSFETs designed according to an original scaling strategy are simulated and the main figures of merit of the high-performance MOS transistor for digital applications are evaluated and compared to the requirements of the International Technology Roadmap for Semiconductors.The results of our analysis confirm the potentials of UTB-DG MOSFETs. In particular, the possibility to control the short channel effects by thinning the silicon layer is fully exploited allowing to adopt almost undoped silicon channel, leading to reduced transversal field.