Yuan Qin, Congyan Lu, Zhaoan Yu, Zhihong Yao, F. Wu, Danian Dong, Xiaolong Zhao, Guangwei Xu, Yuhao Zhang, Shibing Long, Ling Li, Ming Liu
{"title":"Ga2O3光电探测器和氧化薄膜晶体管单片集成的高灵敏度(NEP<1fW•Hz-1/2)背照有源矩阵深紫外图像传感器的首次演示","authors":"Yuan Qin, Congyan Lu, Zhaoan Yu, Zhihong Yao, F. Wu, Danian Dong, Xiaolong Zhao, Guangwei Xu, Yuhao Zhang, Shibing Long, Ling Li, Ming Liu","doi":"10.1109/vlsitechnologyandcir46769.2022.9830520","DOIUrl":null,"url":null,"abstract":"We, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga2O3 photodetector (PD) array and IGZO thin-film-transistors (TFT) based on a low temperature back-end-of-line (BEOL) process. Benefited from the low off-state current of 10-13A, high on/off ratio of 5×108, and high stability of IGZO TFTs, the integrated PD/TFT sensor cell presents super-high sensitivity with NEP down to 1fW•Hz-1/2 with a high responsivity and specific detectivity of 302A/W and 1.7×1015Jones, respectively. The 32×32 DUV image sensor shows excellent uniformity and demonstrates a superior image recognition ability with light intensity down to 2 μW/cm2. This scalable, high-resolution DUV image sensor shows great promise for advanced imaging and machine vision applications.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"First Demonstration of High-Sensitivity (NEP<1fW•Hz-1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors\",\"authors\":\"Yuan Qin, Congyan Lu, Zhaoan Yu, Zhihong Yao, F. Wu, Danian Dong, Xiaolong Zhao, Guangwei Xu, Yuhao Zhang, Shibing Long, Ling Li, Ming Liu\",\"doi\":\"10.1109/vlsitechnologyandcir46769.2022.9830520\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga2O3 photodetector (PD) array and IGZO thin-film-transistors (TFT) based on a low temperature back-end-of-line (BEOL) process. Benefited from the low off-state current of 10-13A, high on/off ratio of 5×108, and high stability of IGZO TFTs, the integrated PD/TFT sensor cell presents super-high sensitivity with NEP down to 1fW•Hz-1/2 with a high responsivity and specific detectivity of 302A/W and 1.7×1015Jones, respectively. The 32×32 DUV image sensor shows excellent uniformity and demonstrates a superior image recognition ability with light intensity down to 2 μW/cm2. This scalable, high-resolution DUV image sensor shows great promise for advanced imaging and machine vision applications.\",\"PeriodicalId\":332454,\"journal\":{\"name\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830520\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
First Demonstration of High-Sensitivity (NEP<1fW•Hz-1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors
We, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga2O3 photodetector (PD) array and IGZO thin-film-transistors (TFT) based on a low temperature back-end-of-line (BEOL) process. Benefited from the low off-state current of 10-13A, high on/off ratio of 5×108, and high stability of IGZO TFTs, the integrated PD/TFT sensor cell presents super-high sensitivity with NEP down to 1fW•Hz-1/2 with a high responsivity and specific detectivity of 302A/W and 1.7×1015Jones, respectively. The 32×32 DUV image sensor shows excellent uniformity and demonstrates a superior image recognition ability with light intensity down to 2 μW/cm2. This scalable, high-resolution DUV image sensor shows great promise for advanced imaging and machine vision applications.
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